IS65WV5128DALL资料datasheet下载供应商报价-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
IS65WV5128DALL	文件：525.36 Kbytes Page：18 Pages	512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 文件：525.36 Kbytes 页数：18 Pages	ISSI 矽成半导体	ISSI
IS65WV5128DALL	文件：300 bytes Page：1 Pages	PowerSaver™ Lower Power Asynchronous SRAM	ISSI 矽成半导体	ISSI
IS65WV5128DBLL	文件：525.36 Kbytes Page：18 Pages	512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 文件：525.36 Kbytes 页数：18 Pages	ISSI 矽成半导体	ISSI
IS65WV5128EBLL	文件：809.4 Kbytes Page：18 Pages	512Kx8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES  High-speed access time: 35ns, 45ns, 55ns  CMOS low power operation – Operating Current: 22 mA (max) at 85°C – CMOS Standby Current: 3.7uA (typ) at 25°C  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV5128EALL) – 2.2V-3.6V VDD (IS62/65WV5128EBLL 文件：809.4 Kbytes 页数：18 Pages	ISSI 矽成半导体	ISSI
IS65WV5128ECLL	文件：809.4 Kbytes Page：18 Pages	512Kx8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES  High-speed access time: 35ns, 45ns, 55ns  CMOS low power operation – Operating Current: 22 mA (max) at 85°C – CMOS Standby Current: 3.7uA (typ) at 25°C  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV5128EALL) – 2.2V-3.6V VDD (IS62/65WV5128EBLL 文件：809.4 Kbytes 页数：18 Pages	ISSI 矽成半导体	ISSI

更多IS65WV5128DALL供应商更新时间2026-2-9 9:06:00