512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

文件：525.36 Kbytes 页数：18 Pages

ISSI

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PowerSaver™ Lower Power Asynchronous SRAM

ISSI

矽成半导体

512Kx8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES  High-speed access time: 35ns, 45ns, 55ns  CMOS low power operation – Operating Current: 22 mA (max) at 85°C – CMOS Standby Current: 3.7uA (typ) at 25°C  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV5128EALL) – 2.2V-3.6V VDD (IS62/65WV5128EBLL

文件：809.4 Kbytes 页数：18 Pages

ISSI

矽成半导体

512Kx8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES  High-speed access time: 35ns, 45ns, 55ns  CMOS low power operation – Operating Current: 22 mA (max) at 85°C – CMOS Standby Current: 3.7uA (typ) at 25°C  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV5128EALL) – 2.2V-3.6V VDD (IS62/65WV5128EBLL

文件：809.4 Kbytes 页数：18 Pages

ISSI

矽成半导体

512Kx8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 32 mA (max.) – CMOS Standby Current: 3.2 uA (typ., 25°C)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV5128EHALL) – 2.2V-3.6V VDD (IS62/65WV5128EHBLL)  Option

文件：843.83 Kbytes 页数：18 Pages

ISSI

矽成半导体