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型号	下载订购	功能描述	制造商上传企业	LOGO
IS63LV1024L-10TI	文件：45.6 Kbytes Page：9 Pages	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t 文件：45.6 Kbytes 页数：9 Pages	ISSI 矽成半导体	ISSI
IS63LV1024L-12B	文件：45.6 Kbytes Page：9 Pages	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t 文件：45.6 Kbytes 页数：9 Pages	ISSI 矽成半导体	ISSI
IS63LV1024L-12BI	文件：45.6 Kbytes Page：9 Pages	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t 文件：45.6 Kbytes 页数：9 Pages	ISSI 矽成半导体	ISSI
IS63LV1024L-12H	文件：45.6 Kbytes Page：9 Pages	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t 文件：45.6 Kbytes 页数：9 Pages	ISSI 矽成半导体	ISSI
IS63LV1024L-12J	文件：45.6 Kbytes Page：9 Pages	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t 文件：45.6 Kbytes 页数：9 Pages	ISSI 矽成半导体	ISSI
IS63LV1024L-12JI	文件：45.6 Kbytes Page：9 Pages	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t 文件：45.6 Kbytes 页数：9 Pages	ISSI 矽成半导体	ISSI
IS63LV1024L-12K	文件：45.6 Kbytes Page：9 Pages	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t 文件：45.6 Kbytes 页数：9 Pages	ISSI 矽成半导体	ISSI
IS63LV1024L-12KI	文件：45.6 Kbytes Page：9 Pages	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t 文件：45.6 Kbytes 页数：9 Pages	ISSI 矽成半导体	ISSI
IS63LV1024L-12T	文件：45.6 Kbytes Page：9 Pages	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t 文件：45.6 Kbytes 页数：9 Pages	ISSI 矽成半导体	ISSI
IS63LV1024L-12TI	文件：45.6 Kbytes Page：9 Pages	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t 文件：45.6 Kbytes 页数：9 Pages	ISSI 矽成半导体	ISSI

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详细参数

型号：
IS63LV1024L
制造商：
ISSI
制造商全称：
Integrated Silicon Solution, Inc
功能描述：
128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市欧立现代科技有限公司	IS63LV1024L	ISSI	24+		12	原装现货,可开13%税票	询价
贸泽芯城（深圳）电子科技有限公司	IS63LV1024L	ISSI	23+	SOJ	10000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市安富世纪电子有限公司	IS63LV1024L	ISSI	23+	SOJ	6500	专注配单,只做原装进口现货	询价
深圳市联世界科技有限公司	IS63LV1024L12H	ISSI	24+/25+		6808	原装正品现货库存价优	询价
谛辉(北京/上海/青岛 )电子科技有限公司	IS63LV1024L-12JL	ISSI	25+	QFN	18000	原厂直接发货进口原装	询价
深圳市凌旭科技有限公司	IS63LV1024L-10TL	ISSI	2016+	TSOP32	3000	只做原装,假一罚十,公司可开17%增值税发票!	询价
深圳市福田区绿盛电子商行	IS63LV1024L-10T	ISSI?	2015+	SOP/DIP	19889	一级代理原装现货,特价热卖!	询价
深圳市弘为电子有限公司	IS63LV1024L-10TL	ISSI	24+	TSOP	5000	原装现货假一罚十	询价
深圳市毅创腾电子科技有限公司	IS63LV1024L-10TLI	ISSI原装		TSOP32	500	原装长期供货!	询价
深圳市勤思达科技有限公司	IS63LV1024L-12JL	ISSI	1215+	SOJ	150000	全新原装,绝对正品,公司大量现货供应.	询价

更多IS63LV1024L供应商更新时间2025-12-1 15:48:00

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