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型号	下载订购	功能描述	制造商上传企业	LOGO
IS63LV1024L-10HI	文件：45.6 Kbytes Page：9 Pages	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t 文件：45.6 Kbytes 页数：9 Pages	ISSI 矽成半导体	ISSI
IS63LV1024L-10J	文件：45.6 Kbytes Page：9 Pages	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t 文件：45.6 Kbytes 页数：9 Pages	ISSI 矽成半导体	ISSI
IS63LV1024L-10JI	文件：45.6 Kbytes Page：9 Pages	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t 文件：45.6 Kbytes 页数：9 Pages	ISSI 矽成半导体	ISSI
IS63LV1024L-10K	文件：45.6 Kbytes Page：9 Pages	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t 文件：45.6 Kbytes 页数：9 Pages	ISSI 矽成半导体	ISSI
IS63LV1024L-10KI	文件：45.6 Kbytes Page：9 Pages	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t 文件：45.6 Kbytes 页数：9 Pages	ISSI 矽成半导体	ISSI
IS63LV1024L-10T	文件：45.6 Kbytes Page：9 Pages	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t 文件：45.6 Kbytes 页数：9 Pages	ISSI 矽成半导体	ISSI
IS63LV1024L-10TI	文件：45.6 Kbytes Page：9 Pages	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t 文件：45.6 Kbytes 页数：9 Pages	ISSI 矽成半导体	ISSI
IS63LV1024L-12B	文件：45.6 Kbytes Page：9 Pages	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t 文件：45.6 Kbytes 页数：9 Pages	ISSI 矽成半导体	ISSI
IS63LV1024L-12BI	文件：45.6 Kbytes Page：9 Pages	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t 文件：45.6 Kbytes 页数：9 Pages	ISSI 矽成半导体	ISSI
IS63LV1024L-12H	文件：45.6 Kbytes Page：9 Pages	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t 文件：45.6 Kbytes 页数：9 Pages	ISSI 矽成半导体	ISSI

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详细参数

型号：
IS63LV1024
制造商：
ISSI
制造商全称：
Integrated Silicon Solution, Inc
功能描述：
128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市壹芯创科技有限公司	IS63LV1024	ISSI	22+	TQFP	5000	全新原装现货!自家库存!	询价
深圳市安富世纪电子有限公司	IS63LV1024	ISSI	23+	SSOP	6500	专注配单,只做原装进口现货	询价
深圳市联世界科技有限公司	IS63LV1024L12H	ISSI	24+/25+		6808	原装正品现货库存价优	询价
谛辉(北京/上海/青岛 )电子科技有限公司	IS63LV1024L-12JL	ISSI	25+	QFN	18000	原厂直接发货进口原装	询价
芯有半导体（深圳）有限公司	IS63LV1024-15K	INTEGRATEDSI	05+	原厂原装	6472	只做全新原装真实现货供应	询价
深圳市弘为电子有限公司	IS63LV1024-10J	ISSI	24+	SOJ	2000	原装现货假一罚十	询价
深圳市勤思达科技有限公司	IS63LV1024L-12JL	ISSI	1215+	SOJ	150000	全新原装,绝对正品,公司大量现货供应.	询价
深圳市福安瓯科技有限公司	IS63LV1024L-10T	ISSI	25+	SOP32L	1200	原装现货热卖中,提供一站式真芯服务	询价
深圳市利加科技有限公司	IS63LV1024-8T	ISSI	16+	NA	8800	原装现货,货真价优	询价
深圳市毅创腾电子科技有限公司	IS63LV1024-10T	ISSI		SOP	1872	正品原装--自家现货-实单可谈	询价

更多IS63LV1024供应商更新时间2026-1-22 16:10:00

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