512Kx8 LOW VOLTAGE, SERIAL SRAM with SPI, SDI and SQI INTERFACE

FEATURES • SPI-Compatible Bus Interface: - 16/20 MHz Clock rate - SPI/SDI/SQI mode • Low-Power CMOS Technology: - Read Current: 16 mA(max) at 3.6V, 20 MHz, 85°C - CMOS Standby Current: 8 A(typ) • 512K x 8-bit Organization: - 32-byte page • Byte, Page and Sequential mode for Reads and Wri

文件：548.59 Kbytes 页数：24 Pages

ISSI

矽成半导体

512Kx8 LOW VOLTAGE, SERIAL SRAM with SPI, SDI and SQI INTERFACE

FEATURES • SPI-Compatible Bus Interface: - 16/20 MHz Clock rate - SPI/SDI/SQI mode • Low-Power CMOS Technology: - Read Current: 16 mA(max) at 3.6V, 20 MHz, 85°C - CMOS Standby Current: 8 A(typ) • 512K x 8-bit Organization: - 32-byte page • Byte, Page and Sequential mode for Reads and Wri

文件：548.59 Kbytes 页数：24 Pages

ISSI

矽成半导体

512Kx8 LOW VOLTAGE, SERIAL SRAM with SPI, SDI and SQI INTERFACE

FEATURES • SPI-Compatible Bus Interface: - 16/20 MHz Clock rate - SPI/SDI/SQI mode • Low-Power CMOS Technology: - Read Current: 16 mA(max) at 3.6V, 20 MHz, 85°C - CMOS Standby Current: 8 A(typ) • 512K x 8-bit Organization: - 32-byte page • Byte, Page and Sequential mode for Reads and Wri

文件：548.59 Kbytes 页数：24 Pages

ISSI

矽成半导体

Asynchronous SRAM

·Broad Solution:- x8, x16, and x32 configurations available- 5V/3.3V/1.8V VDD Power Supply- Commercial, Industrial, and Automotive Temperature (-40 °C to 125 °C) support- BGA, SOJ, SOP, sTSOP, TSOP packages available\n·ECC feature available for High Speed Asynchronous SRAMs\n·Long-term support\n

ISSI

矽成半导体