256K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM

DESCRIPTION The ISSI IS62LV2568LL is a low voltage, 262,144 words by 8 bits, CMOS SRAM. It is fabricated using ISSI’s low voltage, six transistor (6T), CMOS technology. The device is targeted to satisfy the demands of the state-of-the-art technologies such as cell phones and pagers. FEATURES •

文件：62.48 Kbytes 页数：10 Pages

ISSI

矽成半导体

256K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM

DESCRIPTION The ISSI IS62LV2568LL is a low voltage, 262,144 words by 8 bits, CMOS SRAM. It is fabricated using ISSI’s low voltage, six transistor (6T), CMOS technology. The device is targeted to satisfy the demands of the state-of-the-art technologies such as cell phones and pagers. FEATURES •

文件：62.48 Kbytes 页数：10 Pages

ISSI

矽成半导体

256K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM

DESCRIPTION The ISSI IS62LV2568LL is a low voltage, 262,144 words by 8 bits, CMOS SRAM. It is fabricated using ISSI’s low voltage, six transistor (6T), CMOS technology. The device is targeted to satisfy the demands of the state-of-the-art technologies such as cell phones and pagers. FEATURES •

文件：62.48 Kbytes 页数：10 Pages

ISSI

矽成半导体

256K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM

DESCRIPTION The ISSI IS62LV2568LL is a low voltage, 262,144 words by 8 bits, CMOS SRAM. It is fabricated using ISSI’s low voltage, six transistor (6T), CMOS technology. The device is targeted to satisfy the demands of the state-of-the-art technologies such as cell phones and pagers. FEATURES •

文件：62.48 Kbytes 页数：10 Pages

ISSI

矽成半导体

256K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM

DESCRIPTION The ISSI IS62LV2568LL is a low voltage, 262,144 words by 8 bits, CMOS SRAM. It is fabricated using ISSI’s low voltage, six transistor (6T), CMOS technology. The device is targeted to satisfy the demands of the state-of-the-art technologies such as cell phones and pagers. FEATURES •

文件：62.48 Kbytes 页数：10 Pages

ISSI

矽成半导体

32K x 8 LOW VOLTAGE CMOS STATIC RAM

FEATURES • High-speed access time: 20, 45 ns • Automatic power-down when chip is deselected • CMOS low power operation — 17 μW (typical) CMOS standby — 50 mW (typical) operating • TTL compatible interface levels • Single 3.3V power supply • Fully static operation: no clock or refresh requ

文件：305.08 Kbytes 页数：13 Pages

ISSI

矽成半导体

32K x 8 LOW VOLTAGE CMOS STATIC RAM

DESCRIPTION The ISSI IS62/65LV256AL is a very high-speed, low power, 32,768-word by 8-bit static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 15 ns maximum. When

文件：105.43 Kbytes 页数：14 Pages

ISSI

矽成半导体

32K x 8 LOW VOLTAGE CMOS STATIC RAM

DESCRIPTION The ISSI IS62/65LV256AL is a very high-speed, low power, 32,768-word by 8-bit static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 15 ns maximum. When

文件：105.43 Kbytes 页数：14 Pages

ISSI

矽成半导体

32K x 8 LOW VOLTAGE CMOS STATIC RAM

DESCRIPTION The ISSI IS62/65LV256AL is a very high-speed, low power, 32,768-word by 8-bit static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 15 ns maximum. When

文件：105.43 Kbytes 页数：14 Pages

ISSI

矽成半导体

32K x 8 LOW VOLTAGE CMOS STATIC RAM

DESCRIPTION The ISSI IS62/65LV256AL is a very high-speed, low power, 32,768-word by 8-bit static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 15 ns maximum. When

文件：105.43 Kbytes 页数：14 Pages

ISSI

矽成半导体