256K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM

DESCRIPTION The ICSI IS62LV2568L and IS62LV2568LL are low power and low VCC, 262,144 bits words by 8 bits, CMOS RAMs. They are fabricated using ICSI’s high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and lo

文件：455.53 Kbytes 页数：10 Pages

ICSI

256K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM

DESCRIPTION The ISSI IS62LV2568LL is a low voltage, 262,144 words by 8 bits, CMOS SRAM. It is fabricated using ISSI’s low voltage, six transistor (6T), CMOS technology. The device is targeted to satisfy the demands of the state-of-the-art technologies such as cell phones and pagers. FEATURES •

文件：62.48 Kbytes 页数：10 Pages

ISSI

矽成半导体

256K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM

DESCRIPTION The ICSI IS62LV2568L and IS62LV2568LL are low power and low VCC, 262,144 bits words by 8 bits, CMOS RAMs. They are fabricated using ICSI’s high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and lo

文件：455.53 Kbytes 页数：10 Pages

ICSI

256K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM

DESCRIPTION The ICSI IS62LV2568L and IS62LV2568LL are low power and low VCC, 262,144 bits words by 8 bits, CMOS RAMs. They are fabricated using ICSI’s high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and lo

文件：455.53 Kbytes 页数：10 Pages

ICSI

256K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM

DESCRIPTION The ISSI IS62LV2568LL is a low voltage, 262,144 words by 8 bits, CMOS SRAM. It is fabricated using ISSI’s low voltage, six transistor (6T), CMOS technology. The device is targeted to satisfy the demands of the state-of-the-art technologies such as cell phones and pagers. FEATURES •

文件：62.48 Kbytes 页数：10 Pages

ISSI

矽成半导体

256K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM

DESCRIPTION The ICSI IS62LV2568L and IS62LV2568LL are low power and low VCC, 262,144 bits words by 8 bits, CMOS RAMs. They are fabricated using ICSI’s high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and lo

文件：455.53 Kbytes 页数：10 Pages

ICSI

256K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM

DESCRIPTION The ISSI IS62LV2568LL is a low voltage, 262,144 words by 8 bits, CMOS SRAM. It is fabricated using ISSI’s low voltage, six transistor (6T), CMOS technology. The device is targeted to satisfy the demands of the state-of-the-art technologies such as cell phones and pagers. FEATURES •

文件：62.48 Kbytes 页数：10 Pages

ISSI

矽成半导体

256K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM

DESCRIPTION The ISSI IS62LV2568LL is a low voltage, 262,144 words by 8 bits, CMOS SRAM. It is fabricated using ISSI’s low voltage, six transistor (6T), CMOS technology. The device is targeted to satisfy the demands of the state-of-the-art technologies such as cell phones and pagers. FEATURES •

文件：62.48 Kbytes 页数：10 Pages

ISSI

矽成半导体

256K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM

DESCRIPTION The ICSI IS62LV2568L and IS62LV2568LL are low power and low VCC, 262,144 bits words by 8 bits, CMOS RAMs. They are fabricated using ICSI’s high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and lo

文件：455.53 Kbytes 页数：10 Pages

ICSI

256K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM

DESCRIPTION The ISSI IS62LV2568LL is a low voltage, 262,144 words by 8 bits, CMOS SRAM. It is fabricated using ISSI’s low voltage, six transistor (6T), CMOS technology. The device is targeted to satisfy the demands of the state-of-the-art technologies such as cell phones and pagers. FEATURES •

文件：62.48 Kbytes 页数：10 Pages

ISSI

矽成半导体