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型号	下载订购	功能描述	制造商上传企业	LOGO
IS61WV51216EEBLL	文件：871.04 Kbytes Page：20 Pages	512Kx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC FEATURES  High-speed access time: 8ns, 10ns, 20ns  Single power supply – 1.65V-2.2V VDD (IS61WV51216EEALL) – 2.4V-3.6V VDD (IS61/64WV51216EEBLL)  Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin ind 文件：871.04 Kbytes 页数：20 Pages	ISSI 矽成半导体	ISSI
IS61WV51216EEBLL-10B2I	文件：871.04 Kbytes Page：20 Pages	512Kx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC FEATURES  High-speed access time: 8ns, 10ns, 20ns  Single power supply – 1.65V-2.2V VDD (IS61WV51216EEALL) – 2.4V-3.6V VDD (IS61/64WV51216EEBLL)  Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin ind 文件：871.04 Kbytes 页数：20 Pages	ISSI 矽成半导体	ISSI
IS61WV51216EEBLL-10B2LI	文件：871.04 Kbytes Page：20 Pages	512Kx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC FEATURES  High-speed access time: 8ns, 10ns, 20ns  Single power supply – 1.65V-2.2V VDD (IS61WV51216EEALL) – 2.4V-3.6V VDD (IS61/64WV51216EEBLL)  Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin ind 文件：871.04 Kbytes 页数：20 Pages	ISSI 矽成半导体	ISSI
IS61WV51216EEBLL-10BI	文件：871.04 Kbytes Page：20 Pages	512Kx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC FEATURES  High-speed access time: 8ns, 10ns, 20ns  Single power supply – 1.65V-2.2V VDD (IS61WV51216EEALL) – 2.4V-3.6V VDD (IS61/64WV51216EEBLL)  Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin ind 文件：871.04 Kbytes 页数：20 Pages	ISSI 矽成半导体	ISSI
IS61WV51216EEBLL-10BLI	文件：871.04 Kbytes Page：20 Pages	512Kx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC FEATURES  High-speed access time: 8ns, 10ns, 20ns  Single power supply – 1.65V-2.2V VDD (IS61WV51216EEALL) – 2.4V-3.6V VDD (IS61/64WV51216EEBLL)  Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin ind 文件：871.04 Kbytes 页数：20 Pages	ISSI 矽成半导体	ISSI
IS61WV51216EEBLL-10T2LI	文件：871.04 Kbytes Page：20 Pages	512Kx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC FEATURES  High-speed access time: 8ns, 10ns, 20ns  Single power supply – 1.65V-2.2V VDD (IS61WV51216EEALL) – 2.4V-3.6V VDD (IS61/64WV51216EEBLL)  Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin ind 文件：871.04 Kbytes 页数：20 Pages	ISSI 矽成半导体	ISSI
IS61WV51216EEBLL-10T3LI	文件：871.04 Kbytes Page：20 Pages	512Kx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC FEATURES  High-speed access time: 8ns, 10ns, 20ns  Single power supply – 1.65V-2.2V VDD (IS61WV51216EEALL) – 2.4V-3.6V VDD (IS61/64WV51216EEBLL)  Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin ind 文件：871.04 Kbytes 页数：20 Pages	ISSI 矽成半导体	ISSI
IS61WV51216EEBLL-10T4LI	文件：871.04 Kbytes Page：20 Pages	512Kx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC FEATURES  High-speed access time: 8ns, 10ns, 20ns  Single power supply – 1.65V-2.2V VDD (IS61WV51216EEALL) – 2.4V-3.6V VDD (IS61/64WV51216EEBLL)  Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin ind 文件：871.04 Kbytes 页数：20 Pages	ISSI 矽成半导体	ISSI
IS61WV51216EEBLL-10TLI	文件：871.04 Kbytes Page：20 Pages	512Kx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC FEATURES  High-speed access time: 8ns, 10ns, 20ns  Single power supply – 1.65V-2.2V VDD (IS61WV51216EEALL) – 2.4V-3.6V VDD (IS61/64WV51216EEBLL)  Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin ind 文件：871.04 Kbytes 页数：20 Pages	ISSI 矽成半导体	ISSI
IS61WV51216EEBLL-8B2I	文件：871.04 Kbytes Page：20 Pages	512Kx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC FEATURES  High-speed access time: 8ns, 10ns, 20ns  Single power supply – 1.65V-2.2V VDD (IS61WV51216EEALL) – 2.4V-3.6V VDD (IS61/64WV51216EEBLL)  Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin ind 文件：871.04 Kbytes 页数：20 Pages	ISSI 矽成半导体	ISSI

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市星辰微电科技有限公司	IS61WV51216EEBLL	ISSI	25+	BGA	4500	ISSI存储芯片在售	询价
深圳市斌腾达科技有限公司	IS61WV51216EEBLL-10BLI	ISSI, Integrated Silicon Solut	21+	64-LBGA	5280	进口原装!长期供应!绝对优势价格(诚信经营	询价
瀚佳科技(深圳)有限公司	IS61WV51216EEBLL-10T2LI	ISSI, Integrated Silicon Solut	24+	48-TSOP I	56200	一级代理/放心采购	询价
艾睿（深圳）半导体有限公司	IS61WV51216EEBLL-10B2LI	ISSI(美国芯成)	2447	TFBGA-48(6x8)	315000	480个/托盘一级代理专营品牌!原装正品,优势现货,长	询价
讯运(深圳/上海)电子有限公司	IS61WV51216EEBLL-10B2LI	ISSI(美国芯成)	2021+	TFBGA-48(6x8)	499		询价
深圳市祥瑞智科技有限公司	IS61WV51216EEBLL-10TLI	ISSI	25+	TSOP44	10000	原厂原装,价格优势	询价
贸泽芯城（深圳）电子科技有限公司	IS61WV51216EEBLL-10BLI-TR	ISSI	23+	BGA48	3000	一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、	询价
深圳市威雅利发展有限公司	IS61WV51216EEBLL-10BLI	ISSI	21+	TFBGA-48(6x8)	2373	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市赛特兴科技有限公司	IS61WV51216EEBLL-10BLI-TR	ISSI	23+	BGA48	1200	正规渠道,只有原装!	询价
深圳市鹏顺微电子科技有限公司	IS61WV51216EEBLL-10BLI-TR	ISSI(美国芯成)	2022+原装正品	TFBGA-48(6x8)	18000	支持工厂BOM表配单公司只做原装正品货	询价

更多IS61WV51216EEBLL供应商更新时间2026-2-5 11:01:00

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