1Mx16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V/1.8V SUPPLY

FEATURES • High-speed access time: 10ns, 12ns • High- performance, low power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CS# and OE# • TTL compatible inputs and outputs • Single power supply – 1.65V-2.2V VDD (IS61/64WV102416D

文件：514.78 Kbytes 页数：18 Pages

ISSI

矽成半导体

1Mx16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V/1.8V SUPPLY

FEATURES • High-speed access time: 10ns, 12ns • High- performance, low power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CS# and OE# • TTL compatible inputs and outputs • Single power supply – 1.65V-2.2V VDD (IS61/64WV102416D

文件：514.78 Kbytes 页数：18 Pages

ISSI

矽成半导体

1Mx16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V/1.8V SUPPLY

FEATURES • High-speed access time: 10ns, 12ns • High- performance, low power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CS# and OE# • TTL compatible inputs and outputs • Single power supply – 1.65V-2.2V VDD (IS61/64WV102416D

文件：514.78 Kbytes 页数：18 Pages

ISSI

矽成半导体

1Mx16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V/1.8V SUPPLY

FEATURES • High-speed access time: 10ns, 12ns • High- performance, low power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CS# and OE# • TTL compatible inputs and outputs • Single power supply – 1.65V-2.2V VDD (IS61/64WV102416D

文件：514.78 Kbytes 页数：18 Pages

ISSI

矽成半导体

1Mx16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V/1.8V SUPPLY

FEATURES • High-speed access time: 10ns, 12ns • High- performance, low power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CS# and OE# • TTL compatible inputs and outputs • Single power supply – 1.65V-2.2V VDD (IS61/64WV102416D

文件：514.78 Kbytes 页数：18 Pages

ISSI

矽成半导体

1Mx16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V/1.8V SUPPLY

FEATURES • High-speed access time: 10ns, 12ns • High- performance, low power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CS# and OE# • TTL compatible inputs and outputs • Single power supply – 1.65V-2.2V VDD (IS61/64WV102416D

文件：514.78 Kbytes 页数：18 Pages

ISSI

矽成半导体

1Mx16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V/1.8V SUPPLY

FEATURES • High-speed access time: 10ns, 12ns • High- performance, low power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CS# and OE# • TTL compatible inputs and outputs • Single power supply – 1.65V-2.2V VDD (IS61/64WV102416D

文件：514.78 Kbytes 页数：18 Pages

ISSI

矽成半导体

Package：48-TFBGA；包装：托盘 类别：集成电路（IC） 存储器 描述：IC SRAM 16MBIT PARALLEL 48TFBGA

ISSI, Integrated Silicon Solution Inc

Package：48-TFSOP（0.724"，18.40mm 宽）；包装：管件 类别：集成电路（IC） 存储器 描述：IC SRAM 16MBIT PARALLEL 48TSOP I

ISSI, Integrated Silicon Solution Inc

Package：48-TFSOP（0.724"，18.40mm 宽）；包装：托盘 类别：集成电路（IC） 存储器 描述：IC SRAM 16MBIT PARALLEL 48TSOP I

ISSI, Integrated Silicon Solution Inc