4Mx18, 2Mx36 72Mb QUAD (Burst 2) Synchronous SRAM

FEATURES  2Mx36 and 4Mx18 configuration available.  Separate independent read and write ports with concurrent read and write operations.  Max. 400 MHz clock for high bandwidth  Synchronous pipeline read with EARLY write operation.  Double Data Rate (DDR) interface for read and write inpu

文件：766.59 Kbytes 页数：29 Pages

ISSI

矽成半导体

4Mx18, 2Mx36 72Mb QUAD (Burst 2) Synchronous SRAM

FEATURES  2Mx36 and 4Mx18 configuration available.  Separate independent read and write ports with concurrent read and write operations.  Max. 400 MHz clock for high bandwidth  Synchronous pipeline read with EARLY write operation.  Double Data Rate (DDR) interface for read and write inpu

文件：766.59 Kbytes 页数：29 Pages

ISSI

矽成半导体

LFBGA-165(13x15)

ISSI(美国芯成)

上传：深圳市宇创芯科技有限公司

FBGA-165(15x17)

ISSI(美国芯成)

上传：深圳市宇创芯科技有限公司

FBGA-165(15x17)

ISSI(美国芯成)

上传：深圳市宇创芯科技有限公司