4Mx18, 2Mx36 72Mb QUAD (Burst 2) Synchronous SRAM

FEATURES • 2Mx36 and 4Mx18 configuration available. • Separate independent read and write ports with concurrent read and write operations. • Max. 400 MHz clock for high bandwidth • Synchronous pipeline read with EARLY write operation. • Double Data Rate (DDR) interface for read and write inpu

文件：766.59 Kbytes 页数：29 Pages

ISSI

矽成半导体

4Mx18, 2Mx36 72Mb QUAD (Burst 2) Synchronous SRAM

FEATURES • 2Mx36 and 4Mx18 configuration available. • Separate independent read and write ports with concurrent read and write operations. • Max. 400 MHz clock for high bandwidth • Synchronous pipeline read with EARLY write operation. • Double Data Rate (DDR) interface for read and write inpu

文件：766.59 Kbytes 页数：29 Pages

ISSI

矽成半导体

4Mx18, 2Mx36 72Mb QUAD (Burst 2) Synchronous SRAM

FEATURES • 2Mx36 and 4Mx18 configuration available. • Separate independent read and write ports with concurrent read and write operations. • Max. 400 MHz clock for high bandwidth • Synchronous pipeline read with EARLY write operation. • Double Data Rate (DDR) interface for read and write inpu

文件：766.59 Kbytes 页数：29 Pages

ISSI

矽成半导体

4Mx18, 2Mx36 72Mb QUAD (Burst 2) Synchronous SRAM

FEATURES • 2Mx36 and 4Mx18 configuration available. • Separate independent read and write ports with concurrent read and write operations. • Max. 400 MHz clock for high bandwidth • Synchronous pipeline read with EARLY write operation. • Double Data Rate (DDR) interface for read and write inpu

文件：766.59 Kbytes 页数：29 Pages

ISSI

矽成半导体