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型号	下载订购	功能描述	制造商上传企业	LOGO
IS61QDB41M36A	文件：827.67 Kbytes Page：30 Pages	2Mx18, 1Mx36 36Mb QUAD (Burst 4) SYNCHRONOUS SRAM FEATURES  1Mx36 and 2Mx18 configuration available.  On-chip Delay-Locked Loop (DLL) for wide data valid window.  Separate independent read and write ports with concurrent read and write operations.  Synchronous pipeline read with late write operation.  Double Data Rate (DDR) interface fo 文件：827.67 Kbytes 页数：30 Pages	ISSI 矽成半导体	ISSI
IS61QDB41M36A	文件：798.08 Kbytes Page：30 Pages	Synchronous pipeline read with late write operation 文件：798.08 Kbytes 页数：30 Pages	ISSI 矽成半导体	ISSI
IS61QDB41M36A -400M3L	文件：827.67 Kbytes Page：30 Pages	2Mx18, 1Mx36 36Mb QUAD (Burst 4) SYNCHRONOUS SRAM FEATURES  1Mx36 and 2Mx18 configuration available.  On-chip Delay-Locked Loop (DLL) for wide data valid window.  Separate independent read and write ports with concurrent read and write operations.  Synchronous pipeline read with late write operation.  Double Data Rate (DDR) interface fo 文件：827.67 Kbytes 页数：30 Pages	ISSI 矽成半导体	ISSI
IS61QDB41M36A-250B4	文件：827.67 Kbytes Page：30 Pages	2Mx18, 1Mx36 36Mb QUAD (Burst 4) SYNCHRONOUS SRAM FEATURES  1Mx36 and 2Mx18 configuration available.  On-chip Delay-Locked Loop (DLL) for wide data valid window.  Separate independent read and write ports with concurrent read and write operations.  Synchronous pipeline read with late write operation.  Double Data Rate (DDR) interface fo 文件：827.67 Kbytes 页数：30 Pages	ISSI 矽成半导体	ISSI
IS61QDB41M36A-250B4I	文件：827.67 Kbytes Page：30 Pages	2Mx18, 1Mx36 36Mb QUAD (Burst 4) SYNCHRONOUS SRAM FEATURES  1Mx36 and 2Mx18 configuration available.  On-chip Delay-Locked Loop (DLL) for wide data valid window.  Separate independent read and write ports with concurrent read and write operations.  Synchronous pipeline read with late write operation.  Double Data Rate (DDR) interface fo 文件：827.67 Kbytes 页数：30 Pages	ISSI 矽成半导体	ISSI
IS61QDB41M36A-250B4L	文件：827.67 Kbytes Page：30 Pages	2Mx18, 1Mx36 36Mb QUAD (Burst 4) SYNCHRONOUS SRAM FEATURES  1Mx36 and 2Mx18 configuration available.  On-chip Delay-Locked Loop (DLL) for wide data valid window.  Separate independent read and write ports with concurrent read and write operations.  Synchronous pipeline read with late write operation.  Double Data Rate (DDR) interface fo 文件：827.67 Kbytes 页数：30 Pages	ISSI 矽成半导体	ISSI
IS61QDB41M36A-250B4LI	文件：827.67 Kbytes Page：30 Pages	2Mx18, 1Mx36 36Mb QUAD (Burst 4) SYNCHRONOUS SRAM FEATURES  1Mx36 and 2Mx18 configuration available.  On-chip Delay-Locked Loop (DLL) for wide data valid window.  Separate independent read and write ports with concurrent read and write operations.  Synchronous pipeline read with late write operation.  Double Data Rate (DDR) interface fo 文件：827.67 Kbytes 页数：30 Pages	ISSI 矽成半导体	ISSI
IS61QDB41M36A-250M3	文件：827.67 Kbytes Page：30 Pages	2Mx18, 1Mx36 36Mb QUAD (Burst 4) SYNCHRONOUS SRAM FEATURES  1Mx36 and 2Mx18 configuration available.  On-chip Delay-Locked Loop (DLL) for wide data valid window.  Separate independent read and write ports with concurrent read and write operations.  Synchronous pipeline read with late write operation.  Double Data Rate (DDR) interface fo 文件：827.67 Kbytes 页数：30 Pages	ISSI 矽成半导体	ISSI
IS61QDB41M36A-250M3I	文件：827.67 Kbytes Page：30 Pages	2Mx18, 1Mx36 36Mb QUAD (Burst 4) SYNCHRONOUS SRAM FEATURES  1Mx36 and 2Mx18 configuration available.  On-chip Delay-Locked Loop (DLL) for wide data valid window.  Separate independent read and write ports with concurrent read and write operations.  Synchronous pipeline read with late write operation.  Double Data Rate (DDR) interface fo 文件：827.67 Kbytes 页数：30 Pages	ISSI 矽成半导体	ISSI
IS61QDB41M36A-250M3L	文件：827.67 Kbytes Page：30 Pages	2Mx18, 1Mx36 36Mb QUAD (Burst 4) SYNCHRONOUS SRAM FEATURES  1Mx36 and 2Mx18 configuration available.  On-chip Delay-Locked Loop (DLL) for wide data valid window.  Separate independent read and write ports with concurrent read and write operations.  Synchronous pipeline read with late write operation.  Double Data Rate (DDR) interface fo 文件：827.67 Kbytes 页数：30 Pages	ISSI 矽成半导体	ISSI

详细参数

型号：
IS61QDB41M36A
功能描述：
静态随机存取存储器 36Mb 1Mx36 165ball QUAD Sync 静态随机存取存储器
RoHS：
否
制造商：
Cypress Semiconductor
存储容量：
16 Mbit
组织：
1 M x 16
访问时间：
55 ns
电源电压-最大：
3.6 V
电源电压-最小：
2.2 V
最大工作电流：
22 uA
最大工作温度：
+ 85 C
最小工作温度：
- 40 C
安装风格：
SMD/SMT
封装/箱体：
TSOP-48
封装：
Tray

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市斌腾达科技有限公司	IS61QDB41M36A-250M3L	ISSI, Integrated Silicon Solut	21+	54-VFBGA	5280	进口原装!长期供应!绝对优势价格(诚信经营	询价
瀚佳科技(深圳)有限公司	IS61QDB41M36A-250M3L	ISSI, Integrated Silicon Solut	24+	165-LFBGA(15x17)	56200	一级代理/放心采购	询价
深圳市艾宇欣科技有限公司	IS61QDB41M36A-250M3L	ISSI	1931+	N/A	493	加我qq或微信，了解更多详细信息,体验一站式购物	询价
深圳市科雨电子有限公司	IS61QDB41M36A-250M3L	ISSI	25+	BGA-165	1001	就找我吧!--邀您体验愉快问购元件!	询价
深圳市威尔健半导体有限公司	IS61QDB41M36A-300B4LI	ISSI	23+	FGBA-165	50000	全新原装正品现货,支持订货	询价
京海半导体(深圳)有限公司	IS61QDB41M36A-300B4LI	ISSI	21+	FGBA-165	10000	原装现货假一罚十	询价
深圳市河锋鑫科技有限公司	IS61QDB41M36A250M3L	ISSI Integrated Silicon Soluti	22+	165LFBGA (15x17)	9000	原厂渠道,现货配单	询价
深圳市鹏顺微电子科技有限公司	IS61QDB41M36A-250M3L	ISSI	2022+	原厂原包装	8600	全新原装支持表配单中国著名电子元器件独立分销	询价
深圳市得捷芯城科技有限公司	IS61QDB41M36A-300B4LI	ISSI	24+	NA/	3478	原装现货,当天可交货,原型号开票	询价
深圳市安富世纪电子有限公司	IS61QDB41M36A-250M3L	ISSI, Integrated Silicon Solu	23+	165-LFBGA15x17	7300	专注配单,只做原装进口现货	询价

更多IS61QDB41M36A供应商更新时间2025-12-10 13:01:00

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