IS61NLP51236数据手册原装现货ISSI第5页-114ic电子网

首页 >IS61NLP51236>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
IS61NLP51236B-250B2I	文件：1.97506 Mbytes Page：39 Pages	512 K x36 and 1024 K x18 18 Mb PIPELINE NO WAIT STATE BUS SYNCHRONOUS SRAM FEATURES • 100 percent bus utilization • No wait cycles between Read and Write • Internal self-timed write cycle • Individual Byte Write Control • Single R/W (Read/Write) control pin • Clock controlled, registered address, data and control • Interleaved or linear burst sequence control usin 文件：1.97506 Mbytes 页数：39 Pages	ISSI 矽成半导体	ISSI
IS61NLP51236B-250B2L	文件：1.97506 Mbytes Page：39 Pages	512 K x36 and 1024 K x18 18 Mb PIPELINE NO WAIT STATE BUS SYNCHRONOUS SRAM FEATURES • 100 percent bus utilization • No wait cycles between Read and Write • Internal self-timed write cycle • Individual Byte Write Control • Single R/W (Read/Write) control pin • Clock controlled, registered address, data and control • Interleaved or linear burst sequence control usin 文件：1.97506 Mbytes 页数：39 Pages	ISSI 矽成半导体	ISSI
IS61NLP51236B-250B2LI	文件：1.97506 Mbytes Page：39 Pages	512 K x36 and 1024 K x18 18 Mb PIPELINE NO WAIT STATE BUS SYNCHRONOUS SRAM FEATURES • 100 percent bus utilization • No wait cycles between Read and Write • Internal self-timed write cycle • Individual Byte Write Control • Single R/W (Read/Write) control pin • Clock controlled, registered address, data and control • Interleaved or linear burst sequence control usin 文件：1.97506 Mbytes 页数：39 Pages	ISSI 矽成半导体	ISSI
IS61NLP51236B-250B3	文件：1.97506 Mbytes Page：39 Pages	512 K x36 and 1024 K x18 18 Mb PIPELINE NO WAIT STATE BUS SYNCHRONOUS SRAM FEATURES • 100 percent bus utilization • No wait cycles between Read and Write • Internal self-timed write cycle • Individual Byte Write Control • Single R/W (Read/Write) control pin • Clock controlled, registered address, data and control • Interleaved or linear burst sequence control usin 文件：1.97506 Mbytes 页数：39 Pages	ISSI 矽成半导体	ISSI
IS61NLP51236B-250B3I	文件：1.97506 Mbytes Page：39 Pages	512 K x36 and 1024 K x18 18 Mb PIPELINE NO WAIT STATE BUS SYNCHRONOUS SRAM FEATURES • 100 percent bus utilization • No wait cycles between Read and Write • Internal self-timed write cycle • Individual Byte Write Control • Single R/W (Read/Write) control pin • Clock controlled, registered address, data and control • Interleaved or linear burst sequence control usin 文件：1.97506 Mbytes 页数：39 Pages	ISSI 矽成半导体	ISSI
IS61NLP51236B-250B3L	文件：1.97506 Mbytes Page：39 Pages	512 K x36 and 1024 K x18 18 Mb PIPELINE NO WAIT STATE BUS SYNCHRONOUS SRAM FEATURES • 100 percent bus utilization • No wait cycles between Read and Write • Internal self-timed write cycle • Individual Byte Write Control • Single R/W (Read/Write) control pin • Clock controlled, registered address, data and control • Interleaved or linear burst sequence control usin 文件：1.97506 Mbytes 页数：39 Pages	ISSI 矽成半导体	ISSI
IS61NLP51236B-250B3LI	文件：1.97506 Mbytes Page：39 Pages	512 K x36 and 1024 K x18 18 Mb PIPELINE NO WAIT STATE BUS SYNCHRONOUS SRAM FEATURES • 100 percent bus utilization • No wait cycles between Read and Write • Internal self-timed write cycle • Individual Byte Write Control • Single R/W (Read/Write) control pin • Clock controlled, registered address, data and control • Interleaved or linear burst sequence control usin 文件：1.97506 Mbytes 页数：39 Pages	ISSI 矽成半导体	ISSI
IS61NLP51236B-250TQ	文件：1.97506 Mbytes Page：39 Pages	512 K x36 and 1024 K x18 18 Mb PIPELINE NO WAIT STATE BUS SYNCHRONOUS SRAM FEATURES • 100 percent bus utilization • No wait cycles between Read and Write • Internal self-timed write cycle • Individual Byte Write Control • Single R/W (Read/Write) control pin • Clock controlled, registered address, data and control • Interleaved or linear burst sequence control usin 文件：1.97506 Mbytes 页数：39 Pages	ISSI 矽成半导体	ISSI
IS61NLP51236B-250TQI	文件：1.97506 Mbytes Page：39 Pages	512 K x36 and 1024 K x18 18 Mb PIPELINE NO WAIT STATE BUS SYNCHRONOUS SRAM FEATURES • 100 percent bus utilization • No wait cycles between Read and Write • Internal self-timed write cycle • Individual Byte Write Control • Single R/W (Read/Write) control pin • Clock controlled, registered address, data and control • Interleaved or linear burst sequence control usin 文件：1.97506 Mbytes 页数：39 Pages	ISSI 矽成半导体	ISSI
IS61NLP51236B-250TQL	文件：1.97506 Mbytes Page：39 Pages	512 K x36 and 1024 K x18 18 Mb PIPELINE NO WAIT STATE BUS SYNCHRONOUS SRAM FEATURES • 100 percent bus utilization • No wait cycles between Read and Write • Internal self-timed write cycle • Individual Byte Write Control • Single R/W (Read/Write) control pin • Clock controlled, registered address, data and control • Interleaved or linear burst sequence control usin 文件：1.97506 Mbytes 页数：39 Pages	ISSI 矽成半导体	ISSI

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技术参数

Organization：
512Kx36
Product Type：
No-Wait Pipeline
VccQ：
2.5V/3.3V
Speed (MHz)：
250200
tKQ(ns)：
2.6
Package Pins：
BGA(119)
Temperature Grade：
C
Status：
Prod

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市富芯乐电子科技有限公司	IS61NLP51236	ISSI	24+	SOT-5855&NBS	4500	只做原装正品现货欢迎来电查询15919825718	询价
深圳市毅创腾电子科技有限公司	IS61NLP51236-200TQLI	ISSI		QFP	800	正品原装--自家现货-实单可谈	询价
深圳市福安瓯科技有限公司	IS61NLP51236-200TQLI	ISSI	25+	TQFP100	5000		询价
深圳诚思涵科技有限公司	IS61NLP51236-200TQLI	ISSI	16+	TQFP	762	进口原装现货/价格优势!	询价
深圳市豪迈兴电子有限公司	IS61NLP51236-7.5TQI	ISSI	24+	QFP	5825	公司原厂原装现货假一罚十!特价出售!强势库存!	询价
深圳市卓越微芯电子有限公司	IS61NLP51236B-200TQLI	ISSI	25+	QFP	1	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市海天鸿电子科技有限公司	IS61NLP51236-200TQLI	ISSI	1650+	?	8450	只做原装进口,假一罚十	询价
深圳市正迈科技有限公司	IS61NLP51236-200TQLI	ISSI	23+	NA	32587	专业电子元器件供应链正迈科技特价代理特价，原装元器件供应，支持开发样品	询价
深圳市佳鑫美电子科技有限公司	IS61NLP5123675TQI	ISSI	25+	QFP	4500	原装正品!公司现货!欢迎来电!	询价
千层芯半导体(深圳)有限公司	IS61NLP51236-200TQLI	ISSI	24+	SOP	42500	专营ISSI进口原装现货可开17增值税票	询价

更多IS61NLP51236供应商更新时间2025-11-24 17:49:00

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