256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

文件：64.879 Kbytes 页数：11 Pages

ISSI

矽成半导体

256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

文件：64.879 Kbytes 页数：11 Pages

ISSI

矽成半导体

256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

文件：64.879 Kbytes 页数：11 Pages

ISSI

矽成半导体

256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

文件：64.879 Kbytes 页数：11 Pages

ISSI

矽成半导体

256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION\nThe ISSI IS61LV25616L is a high-speed, 4,194,304-bit static RAM organized as 262,144 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technol ogy. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power c • High-speed access time:\n  — 10, 12, and 15 ns\n• Low Active Power\n  — Less than 90mA (typ.) Active Current\n• Low standby power:\n  — Less than 1 mA (typ.) CMOS standby\n• TTL compatible interface levels\n• Single 3.3V power supply\n• Fully static operation: no clock or refresh required\n• Three;

ISSI

矽成半导体

静态随机存储器(SRAM)

Integrated Silicon Solution

Package：48-TFBGA；包装：托盘 类别：集成电路（IC） 存储器 描述：IC SRAM 4MBIT PARALLEL 48MINIBGA

ISSI, Integrated Silicon Solution Inc

Package：48-TFBGA；包装：托盘 类别：集成电路（IC） 存储器 描述：IC SRAM 4MBIT PARALLEL 48MINIBGA

ISSI, Integrated Silicon Solution Inc

Package：48-TFBGA；包装：托盘 类别：集成电路（IC） 存储器 描述：IC SRAM 4MBIT PARALLEL 48MINIBGA

ISSI, Integrated Silicon Solution Inc