IS61LV256技术资料参数原装现货ICSI第3页-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
IS61LV2568-10K	文件：45.22 Kbytes Page：9 Pages	256K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV2568 is a very high-speed, low power, 262,144-word by 8-bit CMOS static RAM. The IS61LV2568 is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low powe 文件：45.22 Kbytes 页数：9 Pages	ISSI 矽成半导体	ISSI
IS61LV2568-10KI	文件：45.22 Kbytes Page：9 Pages	256K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV2568 is a very high-speed, low power, 262,144-word by 8-bit CMOS static RAM. The IS61LV2568 is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low powe 文件：45.22 Kbytes 页数：9 Pages	ISSI 矽成半导体	ISSI
IS61LV2568-10T	文件：88.68 Kbytes Page：8 Pages	256K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV2568 is a very high-speed, low power, 262,144-word by 8-bit CMOS static RAM. The IS61LV2568 is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low powe 文件：88.68 Kbytes 页数：8 Pages	ISSI 矽成半导体	ISSI
IS61LV2568-10T	文件：45.22 Kbytes Page：9 Pages	256K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV2568 is a very high-speed, low power, 262,144-word by 8-bit CMOS static RAM. The IS61LV2568 is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low powe 文件：45.22 Kbytes 页数：9 Pages	ISSI 矽成半导体	ISSI
IS61LV2568-10TI	文件：45.22 Kbytes Page：9 Pages	256K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV2568 is a very high-speed, low power, 262,144-word by 8-bit CMOS static RAM. The IS61LV2568 is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low powe 文件：45.22 Kbytes 页数：9 Pages	ISSI 矽成半导体	ISSI
IS61LV2568-12K	文件：88.68 Kbytes Page：8 Pages	256K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV2568 is a very high-speed, low power, 262,144-word by 8-bit CMOS static RAM. The IS61LV2568 is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low powe 文件：88.68 Kbytes 页数：8 Pages	ISSI 矽成半导体	ISSI
IS61LV2568-12K	文件：45.22 Kbytes Page：9 Pages	256K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV2568 is a very high-speed, low power, 262,144-word by 8-bit CMOS static RAM. The IS61LV2568 is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low powe 文件：45.22 Kbytes 页数：9 Pages	ISSI 矽成半导体	ISSI
IS61LV2568-12KI	文件：45.22 Kbytes Page：9 Pages	256K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV2568 is a very high-speed, low power, 262,144-word by 8-bit CMOS static RAM. The IS61LV2568 is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low powe 文件：45.22 Kbytes 页数：9 Pages	ISSI 矽成半导体	ISSI
IS61LV2568-12T	文件：88.68 Kbytes Page：8 Pages	256K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV2568 is a very high-speed, low power, 262,144-word by 8-bit CMOS static RAM. The IS61LV2568 is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low powe 文件：88.68 Kbytes 页数：8 Pages	ISSI 矽成半导体	ISSI
IS61LV2568-12T	文件：45.22 Kbytes Page：9 Pages	256K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV2568 is a very high-speed, low power, 262,144-word by 8-bit CMOS static RAM. The IS61LV2568 is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low powe 文件：45.22 Kbytes 页数：9 Pages	ISSI 矽成半导体	ISSI

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技术参数

存储器格式：
SRAM
技术：
SRAM - 异步
存储容量：
256Kb （32K x 8）
写周期时间 - 字，页：
12ns
访问时间：
12ns
存储器接口：
并联
电压 - 电源：
3V ~ 3.6V
工作温度：
-40°C ~ 85°C（TA）
安装类型：
表面贴装
封装/外壳：
28-TSSOP（0.465\，11.80mm 宽）
供应商器件封装：
28-TSOP I

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市壹芯创科技有限公司	IS61LV256	ISSI	22+	TQFP	5000	全新原装现货!自家库存!	询价
深圳市佳鑫美电子科技有限公司	IS61LV256	ISSI	25+	SOJ28	3629	原装优势!房间现货!欢迎来电!	询价
深圳市福田区亿兴成电子商行	IS61LV256			小内存	5000		询价
深圳市锐视安科技有限公司	IS61LV256	ISSI	99+	SOJ28	227	特价销售欢迎来电!!	询价
贸泽芯城（深圳）电子科技有限公司	IS61LV256	ISSI	23+	SOJ SOP33	4800	一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、	询价
深圳市安富世纪电子有限公司	IS61LV256	ISSI	23+	TSOP	7300	专注配单,只做原装进口现货	询价
深圳市联世界科技有限公司	IS61LV256-15N	ISSI	24+/25+		374	原装正品现货库存价优	询价
芯有半导体（深圳）有限公司	IS61LV256-12J	ISSI	06+	SOJ	1000	全新原装绝对有货	询价
深圳市福安瓯科技有限公司	IS61LV25616AL-10TL	ISSI	25+	TSOP44	3000		询价
深圳市粤科源兴科技有限公司	IS61LV256-12J	ISSI	13+		4266	原装分销	询价

更多IS61LV256供应商更新时间2026-1-29 16:10:00

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