IS61LV12824-10BI中文资料北京矽成数据手册PDF规格书

DESCRIPTION

TheISSI IS61LV12824 is a high-speed, static RAM organized as 131,072 words by 24 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with low power consumption.

FEATURES

• High-speed access time: 8, 10 ns

• CMOS low power operation

— 756 mW (max.) operating @ 8 ns

— 36 mW (max.) standby @ 8 ns

• TTL compatible interface levels

• Single 3.3V power supply

• Fully static operation: no clock or refresh required

• Three state outputs

• Available in 119-pin Plastic Ball Grid Array (PBGA) and 100-pin TQFP packages.

• Industrial temperature available

• Lead-free available