64Kx32, 64Kx36 SYNCHRONOUS FLOW-THROUGH STATIC RAM

FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Interleaved or linear burst sequence control using MODE input • Three chip enables for simple depth expansion and address pipelining • Com

文件：402.51 Kbytes 页数：16 Pages

ISSI

矽成半导体

64K x 32, 64Kx36 SYNCHRONOUS FLOW-THROUGH STATIC RAM

文件：91.09 Kbytes 页数：16 Pages

ISSI

矽成半导体

64Kx32, 64Kx36 SYNCHRONOUS FLOW-THROUGH STATIC RAM

FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Interleaved or linear burst sequence control using MODE input • Three chip enables for simple depth expansion and address pipelining • Com

文件：402.51 Kbytes 页数：16 Pages

ISSI

矽成半导体

64K x 32, 64Kx36 SYNCHRONOUS FLOW-THROUGH STATIC RAM

文件：91.09 Kbytes 页数：16 Pages

ISSI

矽成半导体

64K x 32, 64Kx36 SYNCHRONOUS FLOW-THROUGH STATIC RAM

文件：91.09 Kbytes 页数：16 Pages

ISSI

矽成半导体

Synchronous SRAM

·4Mb, 9Mb, 18Mb, 36Mb, and 72Mb densities available\n·x18, x36, and x72 configurations available\n·Pipeline, Flow-Through, and No-Wait State (ZBT equivalent)\n·Commercial, Industrial, and Automotive Temperature support\n·ECC feature available for 4Mb product\n·250MHz speed for Pipeline\n·6.5ns acces

ISSI

矽成半导体