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型号	下载订购	功能描述	制造商上传企业	LOGO
IS61LPD25636A	文件：677.27 Kbytes Page：32 Pages	256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs a 文件：677.27 Kbytes 页数：32 Pages	ISSI 矽成半导体	ISSI
IS61LPD25636A	文件：208.17 Kbytes Page：32 Pages	256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM DESCRIPTION The ISSI IS61LPD/VPD25636A and IS61LPD/VPD51218A are high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networking applications. The IS61LPD/VPD25636A is organized as 262,144 words by 36 bits, and the IS61LPD/VPD5 文件：208.17 Kbytes 页数：32 Pages	ISSI 矽成半导体	ISSI
IS61LPD25636A-200B2	文件：208.17 Kbytes Page：32 Pages	256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM DESCRIPTION The ISSI IS61LPD/VPD25636A and IS61LPD/VPD51218A are high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networking applications. The IS61LPD/VPD25636A is organized as 262,144 words by 36 bits, and the IS61LPD/VPD5 文件：208.17 Kbytes 页数：32 Pages	ISSI 矽成半导体	ISSI
IS61LPD25636A-200B2	文件：677.27 Kbytes Page：32 Pages	256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs a 文件：677.27 Kbytes 页数：32 Pages	ISSI 矽成半导体	ISSI
IS61LPD25636A-200B2I	文件：677.27 Kbytes Page：32 Pages	256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs a 文件：677.27 Kbytes 页数：32 Pages	ISSI 矽成半导体	ISSI
IS61LPD25636A-200B2I	文件：208.17 Kbytes Page：32 Pages	256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM DESCRIPTION The ISSI IS61LPD/VPD25636A and IS61LPD/VPD51218A are high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networking applications. The IS61LPD/VPD25636A is organized as 262,144 words by 36 bits, and the IS61LPD/VPD5 文件：208.17 Kbytes 页数：32 Pages	ISSI 矽成半导体	ISSI
IS61LPD25636A-200B3	文件：208.17 Kbytes Page：32 Pages	256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM DESCRIPTION The ISSI IS61LPD/VPD25636A and IS61LPD/VPD51218A are high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networking applications. The IS61LPD/VPD25636A is organized as 262,144 words by 36 bits, and the IS61LPD/VPD5 文件：208.17 Kbytes 页数：32 Pages	ISSI 矽成半导体	ISSI
IS61LPD25636A-200B3	文件：677.27 Kbytes Page：32 Pages	256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs a 文件：677.27 Kbytes 页数：32 Pages	ISSI 矽成半导体	ISSI
IS61LPD25636A-200B3I	文件：677.27 Kbytes Page：32 Pages	256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs a 文件：677.27 Kbytes 页数：32 Pages	ISSI 矽成半导体	ISSI
IS61LPD25636A-200B3I	文件：208.17 Kbytes Page：32 Pages	256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM DESCRIPTION The ISSI IS61LPD/VPD25636A and IS61LPD/VPD51218A are high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networking applications. The IS61LPD/VPD25636A is organized as 262,144 words by 36 bits, and the IS61LPD/VPD5 文件：208.17 Kbytes 页数：32 Pages	ISSI 矽成半导体	ISSI

详细参数

型号：
IS61LPD25636A
制造商：
ISSI
制造商全称：
Integrated Silicon Solution, Inc
功能描述：
256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市富芯乐电子科技有限公司	IS61LPD25636A	ISSI	24+	BGA	4500	只做原装正品现货欢迎来电查询15919825718	询价
深圳市毅创腾电子科技有限公司	IS61LPD25636A-200TQLI	ISSI	23+	100-TQFP(14x20)	71890	专业分销产品!原装正品!价格优势!	询价
瀚佳科技(深圳)有限公司	IS61LPD25636A-200TQLI	ISSI, Integrated Silicon Solut	24+	100-TQFP(14x20)	56200	一级代理/放心采购	询价
深圳市艾宇欣科技有限公司	IS61LPD25636A-200TQLI-TR	ISSI	1931+	N/A	493	加我qq或微信，了解更多详细信息,体验一站式购物	询价
艾睿（深圳）半导体有限公司	IS61LPD25636A-200TQLI	ISSI(美国芯成)	2447	TQFP-100(14x20)	315000	72个/托盘一级代理专营品牌!原装正品,优势现货,长	询价
深圳市科雨电子有限公司	IS61LPD25636A-200TQLI-TR	ISSI	25+	QFP-100	800	就找我吧!--邀您体验愉快问购元件!	询价
深圳市冠亿通科技有限公司	IS61LPD25636A-200TQLI-TR	ISSI,	25+		25000	原厂原包深圳现货主打品牌假一赔百可开票!	询价
讯运(深圳/上海)电子有限公司	IS61LPD25636A-200TQLI	ISSI(美国芯成)	2021+	TQFP-100(14x20)	499		询价
深圳市河锋鑫科技有限公司	IS61LPD25636A200TQLITR	ISSI Integrated Silicon Soluti	22+	100TQFP (14x20)	9000	原厂渠道,现货配单	询价
贸泽芯城（深圳）电子科技有限公司	IS61LPD25636A-200TQ2I	ISSI	23+	QFP100	3000	一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、	询价

更多IS61LPD25636A供应商更新时间2025-12-12 16:06:00

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