DESCRIPTION

The ISSI IS61LPD/VPD25636A and IS61LPD/VPD51218A are high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networking applications. The IS61LPD/VPD25636A is organized as 262,144 words by 36 bits, and the IS61LPD/VPD51218A is organized as 524,288 words by 18 bits.Fabricated withISSIs advanced CMOS technology, the device integrates a 2-bit burst counter, high-speed SRAM core, and high-drive capability outputs into a single monolithic circuit. All synchronous inputs pass through registers controlled by a positive-edge-triggered single clock input.

FEATURES

• Internal self-timed write cycle

• Individual Byte Write Control and Global Write

• Clock controlled, registered address, data and control

• Burst sequence control using MODE input

• Three chip enable option for simple depth expansion and address pipelining

• Common data inputs and data outputs

• Auto Power-down during deselect

• Double cycle deselect

• Snooze MODE for reduced-power standby

• JTAG Boundary Scan for PBGA package

• Power Supply

LPD: Vdd 3.3V + 5, Vddq 3.3V/2.5V + 5

VPD: Vdd 2.5V + 5, Vddq 2.5V + 5

• JEDEC 100-Pin TQFP, 119-pin PBGA and 165-pin PBGA package

• Lead-free available

IS61LPD25636A属于集成电路（IC） > 存储器。ISSI有限公司制造生产的IS61LPD25636A存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。