IS49NLC36160

RLDRAM® 2 Memory;

·Reduced cycle time (up to 8ns at 1GHz)\n·Available in different densities providing flexibility for different design requirements\n·Available in wide bus widths (x9, x18, x 36), separate and common I/Os\n·Different voltage supply to reduce power consumption\n·Supports commercial and industrial operating temperatures for a wide variety of applications\n·Longevity of product availability\n·World class factory support\n

IS49NLC36160

576Mb (x9, x18, x36) Common I/O RLDRAM 2 Memory

IS49NLC36160A

Reduced cycle time

IS49NLC36160-25BI

Package：144-TFBGA；包装：托盘 类别：集成电路（IC） 存储器 描述：IC DRAM 576MBIT PAR 144FCBGA

ISSI, Integrated Silicon Solution Inc

IS49NLC36160-25BL

Package：144-TFBGA；包装：托盘 类别：集成电路（IC） 存储器 描述：IC DRAM 576MBIT PAR 144FCBGA

ISSI, Integrated Silicon Solution Inc

IS49NLC36160-25BLI

Package：144-TFBGA；包装：托盘 类别：集成电路（IC） 存储器 描述：IC DRAM 576MBIT PAR 144FCBGA

ISSI, Integrated Silicon Solution Inc