576Mb (x9, x18, x36) Common I/O RLDRAM 2 Memory

文件：629.7 Kbytes 页数：34 Pages

ISSI

矽成半导体

RLDRAM® 2 Memory

·Reduced cycle time (up to 8ns at 1GHz)\n·Available in different densities providing flexibility for different design requirements\n·Available in wide bus widths (x9, x18, x 36), separate and common I/Os\n·Different voltage supply to reduce power consumption\n·Supports commercial and industrial oper

ISSI

矽成半导体

64Mbx9, 32Mbx18, 16Mbx36 Common I/O RLDRAM 2 Memory

FEATURES • 533MHz DDR operation (1.067 Gb/s/pin data rate) • 38.4Gb/s peak bandwidth (x36 at 533 MHz clock frequency) • Reduced cycle time (15ns at 533MHz) • 32ms refresh (16K refresh for each bank; 128K refresh command must be issued in total each 32ms) • 8 internal banks • Non-multiplexed

文件：742.48 Kbytes 页数：35 Pages

ISSI

矽成半导体

64Mbx9, 32Mbx18, 16Mbx36 Common I/O RLDRAM 2 Memory

FEATURES • 533MHz DDR operation (1.067 Gb/s/pin data rate) • 38.4Gb/s peak bandwidth (x36 at 533 MHz clock frequency) • Reduced cycle time (15ns at 533MHz) • 32ms refresh (16K refresh for each bank; 128K refresh command must be issued in total each 32ms) • 8 internal banks • Non-multiplexed

文件：742.48 Kbytes 页数：35 Pages

ISSI

矽成半导体

64Mbx9, 32Mbx18, 16Mbx36 Common I/O RLDRAM 2 Memory

FEATURES • 533MHz DDR operation (1.067 Gb/s/pin data rate) • 38.4Gb/s peak bandwidth (x36 at 533 MHz clock frequency) • Reduced cycle time (15ns at 533MHz) • 32ms refresh (16K refresh for each bank; 128K refresh command must be issued in total each 32ms) • 8 internal banks • Non-multiplexed

文件：742.48 Kbytes 页数：35 Pages

ISSI

矽成半导体

64Mbx9, 32Mbx18, 16Mbx36 Common I/O RLDRAM 2 Memory

FEATURES • 533MHz DDR operation (1.067 Gb/s/pin data rate) • 38.4Gb/s peak bandwidth (x36 at 533 MHz clock frequency) • Reduced cycle time (15ns at 533MHz) • 32ms refresh (16K refresh for each bank; 128K refresh command must be issued in total each 32ms) • 8 internal banks • Non-multiplexed

文件：742.48 Kbytes 页数：35 Pages

ISSI

矽成半导体

64Mbx9, 32Mbx18, 16Mbx36 Common I/O RLDRAM 2 Memory

FEATURES • 533MHz DDR operation (1.067 Gb/s/pin data rate) • 38.4Gb/s peak bandwidth (x36 at 533 MHz clock frequency) • Reduced cycle time (15ns at 533MHz) • 32ms refresh (16K refresh for each bank; 128K refresh command must be issued in total each 32ms) • 8 internal banks • Non-multiplexed

文件：742.48 Kbytes 页数：35 Pages

ISSI

矽成半导体

64Mbx9, 32Mbx18, 16Mbx36 Common I/O RLDRAM 2 Memory

FEATURES • 533MHz DDR operation (1.067 Gb/s/pin data rate) • 38.4Gb/s peak bandwidth (x36 at 533 MHz clock frequency) • Reduced cycle time (15ns at 533MHz) • 32ms refresh (16K refresh for each bank; 128K refresh command must be issued in total each 32ms) • 8 internal banks • Non-multiplexed

文件：742.48 Kbytes 页数：35 Pages

ISSI

矽成半导体

64Mbx9, 32Mbx18, 16Mbx36 Common I/O RLDRAM 2 Memory

FEATURES • 533MHz DDR operation (1.067 Gb/s/pin data rate) • 38.4Gb/s peak bandwidth (x36 at 533 MHz clock frequency) • Reduced cycle time (15ns at 533MHz) • 32ms refresh (16K refresh for each bank; 128K refresh command must be issued in total each 32ms) • 8 internal banks • Non-multiplexed

文件：742.48 Kbytes 页数：35 Pages

ISSI

矽成半导体

64Mbx9, 32Mbx18, 16Mbx36 Common I/O RLDRAM 2 Memory

FEATURES • 533MHz DDR operation (1.067 Gb/s/pin data rate) • 38.4Gb/s peak bandwidth (x36 at 533 MHz clock frequency) • Reduced cycle time (15ns at 533MHz) • 32ms refresh (16K refresh for each bank; 128K refresh command must be issued in total each 32ms) • 8 internal banks • Non-multiplexed

文件：742.48 Kbytes 页数：35 Pages

ISSI

矽成半导体