IS49NLC36160A-25WBLI中文资料矽成半导体数据手册PDF规格书

FEATURES

• 533MHz DDR operation (1.067 Gb/s/pin data rate)

• 38.4Gb/s peak bandwidth (x36 at 533 MHz clock frequency)

• Reduced cycle time (15ns at 533MHz)

• 32ms refresh (16K refresh for each bank; 128K refresh command must be issued in total each 32ms)

• 8 internal banks

• Non-multiplexed addresses (address multiplexing option available)

• SRAM-type interface

• Programmable READ latency (RL), row cycle time, and burst sequence length

• Balanced READ and WRITE latencies in order to optimize data bus utilization

• Data mask signals (DM) to mask signal of WRITE data; DM is sampled on both edges of DK.

• Differential input clocks (CK, CK#)

• Differential input data clocks (DKx, DKx#)

• On-die DLL generates CK edge-aligned data and output data clock signals

• Data valid signal (QVLD)

• HSTL I/O (1.5V or 1.8V nominal)

• 25-60Ω matched impedance outputs

• 2.5V VEXT, 1.8V VDD, 1.5V or 1.8V VDDQ I/O

• On-die termination (ODT) RTT

• IEEE 1149.1 compliant JTAG boundary scan

• Operating temperature: Commercial (TC = 0° to +95°C ) Industrial (TC = -40°C to +95°C; TA = -40°C to +85°C)