512Mx8, 256Mx16 4Gb DDR3 SDRAM

FEATURES ● Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V ● Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V ● High speed data transfer rates with system frequency up to 1066 MHz ● 8 internal banks for concurrent operation ● 8n-Bit pre-fetch architecture

文件：3.94166 Mbytes 页数：88 Pages

ISSI

矽成半导体

512Mx8, 256Mx16 4Gb DDR3 SDRAM

FEATURES ● Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V ● Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V ● High speed data transfer rates with system frequency up to 1066 MHz ● 8 internal banks for concurrent operation ● 8n-Bit pre-fetch architecture

文件：3.94166 Mbytes 页数：88 Pages

ISSI

矽成半导体

512Mx8, 256Mx16 4Gb DDR3 SDRAM

FEATURES ● Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V ● Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V ● High speed data transfer rates with system frequency up to 1066 MHz ● 8 internal banks for concurrent operation ● 8n-Bit pre-fetch architecture

文件：3.94166 Mbytes 页数：88 Pages

ISSI

矽成半导体

512Mx8, 256Mx16 4Gb DDR3 SDRAM

FEATURES ● Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V ● Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V ● High speed data transfer rates with system frequency up to 1066 MHz ● 8 internal banks for concurrent operation ● 8n-Bit pre-fetch architecture

文件：3.94166 Mbytes 页数：88 Pages

ISSI

矽成半导体

512Mx8, 256Mx16 4Gb DDR3 SDRAM

FEATURES ● Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V ● Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V ● High speed data transfer rates with system frequency up to 1066 MHz ● 8 internal banks for concurrent operation ● 8n-Bit pre-fetch architecture

文件：3.94166 Mbytes 页数：88 Pages

ISSI

矽成半导体

512Mx8, 256Mx16 4Gb DDR3 SDRAM

FEATURES ● Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V ● Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V ● High speed data transfer rates with system frequency up to 1066 MHz ● 8 internal banks for concurrent operation ● 8n-Bit pre-fetch architecture

文件：3.94166 Mbytes 页数：88 Pages

ISSI

矽成半导体

1.35V DDR3L SDRAM

·Bidirectional differential data strobe\n·Data masking per byte on Write commands\n·Programmable burst length of 4 or 8\n·Programmable CAS Latency\n·Auto-Refresh and Self-Refresh Modes\n·OCD (Driver Adjustment)\n·ODT (On Die Termination) supported\n·Write Leveling\n·Long-term support

ISSI

矽成半导体

动态随机存储器(DRAM)

Integrated Silicon Solution

Package：96-TFBGA；包装：卷带（TR） 类别：集成电路（IC） 存储器 描述：IC DRAM 4GBIT PARALLEL 96TWBGA

ISSI, Integrated Silicon Solution Inc

Package：96-TFBGA；包装：卷带（TR） 类别：集成电路（IC） 存储器 描述：IC DRAM 4GBIT PARALLEL 96TWBGA

ISSI, Integrated Silicon Solution Inc