8Mx32, 16Mx16, 32Mx8 256Mb DDR SDRAM

FEATURES • VDD and VDDQ: 2.5V ± 0.2V • SSTL_2 compatible I/O • Double-data rate architecture; two data transfers per clock cycle • Bidirectional, data strobe (DQS) is transmitted/ received with data, to be used in capturing data at the receiver • DQS is edge-aligned with data for READs and

文件：763.31 Kbytes 页数：32 Pages

ISSI

矽成半导体

8Mx32, 16Mx16, 32Mx8 256Mb DDR SDRAM

FEATURES • VDD and VDDQ: 2.5V ± 0.2V • SSTL_2 compatible I/O • Double-data rate architecture; two data transfers per clock cycle • Bidirectional, data strobe (DQS) is transmitted/ received with data, to be used in capturing data at the receiver • DQS is edge-aligned with data for READs and

文件：763.31 Kbytes 页数：32 Pages

ISSI

矽成半导体

8Mx32, 16Mx16, 32Mx8 256Mb DDR SDRAM

FEATURES • VDD and VDDQ: 2.5V ± 0.2V • SSTL_2 compatible I/O • Double-data rate architecture; two data transfers per clock cycle • Bidirectional, data strobe (DQS) is transmitted/ received with data, to be used in capturing data at the receiver • DQS is edge-aligned with data for READs and

文件：763.31 Kbytes 页数：32 Pages

ISSI

矽成半导体

Auto refresh and Self refresh

文件：1.09752 Mbytes 页数：37 Pages

ISSI

矽成半导体

Auto refresh and Self refresh

文件：1.09752 Mbytes 页数：37 Pages

ISSI

矽成半导体

Auto refresh and Self refresh

文件：1.09752 Mbytes 页数：37 Pages

ISSI

矽成半导体

16Meg x 16 256-MBIT DDR SDRAM

文件：770.16 Kbytes 页数：56 Pages

ISSI

矽成半导体

16Meg x 16 256-MBIT DDR SDRAM

文件：770.16 Kbytes 页数：56 Pages

ISSI

矽成半导体

16Meg x 16 256-MBIT DDR SDRAM

文件：770.16 Kbytes 页数：56 Pages

ISSI

矽成半导体

16Meg x 16 256-MBIT DDR SDRAM

文件：770.16 Kbytes 页数：56 Pages

ISSI

矽成半导体