16Mx32, 32Mx16, 64Mx8 512Mb DDR SDRAM

FEATURES • VDD and VDDQ: 2.5V ± 0.2V (-6) • VDD and VDDQ: 2.6V ± 0.1V (-5) • SSTL_2 compatible I/O • Double-data rate architecture; two data transfers per clock cycle • Bidirectional, data strobe (DQS) is transmitted/ received with data, to be used in capturing data at the receiver • DQS

文件：1.11601 Mbytes 页数：33 Pages

ISSI

矽成半导体

Package：66-TSSOP（szerokość 0，400"，10，16mm）；包装：托盘 类别：集成电路（IC） 存储器 描述：IC DRAM 512MBIT PAR 66TSOP II

ISSI, Integrated Silicon Solution Inc

Package：66-TSSOP（szerokość 0，400"，10，16mm）；包装：卷带（TR） 类别：集成电路（IC） 存储器 描述：IC DRAM 512MBIT PAR 66TSOP II

ISSI, Integrated Silicon Solution Inc

16Mx32, 32Mx16, 64Mx8 512Mb DDR SDRAM

FEATURES • VDD and VDDQ: 2.5V ± 0.2V (-6) • VDD and VDDQ: 2.6V ± 0.1V (-5) • SSTL_2 compatible I/O • Double-data rate architecture; two data transfers per clock cycle • Bidirectional, data strobe (DQS) is transmitted/ received with data, to be used in capturing data at the receiver • DQS

文件：1.11601 Mbytes 页数：33 Pages

ISSI

矽成半导体

16Mx32, 32Mx16, 64Mx8 512Mb DDR SDRAM

FEATURES • VDD and VDDQ: 2.5V ± 0.2V (-6) • VDD and VDDQ: 2.6V ± 0.1V (-5) • SSTL_2 compatible I/O • Double-data rate architecture; two data transfers per clock cycle • Bidirectional, data strobe (DQS) is transmitted/ received with data, to be used in capturing data at the receiver • DQS

文件：1.11601 Mbytes 页数：33 Pages

ISSI

矽成半导体

16Mx32, 32Mx16, 64Mx8 512Mb DDR SDRAM

FEATURES • VDD and VDDQ: 2.5V ± 0.2V (-6) • VDD and VDDQ: 2.6V ± 0.1V (-5) • SSTL_2 compatible I/O • Double-data rate architecture; two data transfers per clock cycle • Bidirectional, data strobe (DQS) is transmitted/ received with data, to be used in capturing data at the receiver • DQS

文件：1.45655 Mbytes 页数：33 Pages

ISSI

矽成半导体