Mobile DDR SDRAM

·Double-data rate\n·Four internal banks with bank controls\n·Programmable Burst Length and CAS Latency\n·Power Savings with:- Partial Array Self Refresh (PASR)- Temperature Compenstate Self Refresh- Selectable Output Driver Strength- Deep Power Down\n·Long term support

ISSI

矽成半导体

Four internal banks for concurrent operation

文件：1.85788 Mbytes 页数：43 Pages

ISSI

矽成半导体

动态随机存取存储器 1G, 1.8V, 200Mhz 64Mx16 Mobile DDR

ISSI

矽成半导体

动态随机存取存储器 1G, 1.8V, 166Mhz 64Mx16 Mobile DDR

ISSI

矽成半导体

Package：60-TFBGA；包装：托盘 类别：集成电路（IC） 存储器 描述：IC DRAM 1GBIT PARALLEL 60TWBGA

ISSI, Integrated Silicon Solution Inc

Package：60-TFBGA；包装：卷带（TR） 类别：集成电路（IC） 存储器 描述：IC DRAM 1GBIT PARALLEL 60TWBGA

ISSI, Integrated Silicon Solution Inc

Package：60-TFBGA；包装：卷带（TR） 类别：集成电路（IC） 存储器 描述：IC DRAM 1GBIT PARALLEL 60TWBGA

ISSI, Integrated Silicon Solution Inc