Mobile DDR SDRAM

·Double-data rate\n·Four internal banks with bank controls\n·Programmable Burst Length and CAS Latency\n·Power Savings with:- Partial Array Self Refresh (PASR)- Temperature Compenstate Self Refresh- Selectable Output Driver Strength- Deep Power Down\n·Long term support\n

ISSI

矽成半导体

Fully differential clock inputs

文件：1.94009 Mbytes 页数：45 Pages

ISSI

矽成半导体

动态随机存取存储器 256M, 1.8V, 166Mhz Mobile DDR

ISSI

矽成半导体

Package：60-TFBGA；包装：管件 类别：集成电路（IC） 存储器 描述：IC DRAM 256MBIT PARALLEL 60TFBGA

ISSI, Integrated Silicon Solution Inc

Package：60-TFBGA；包装：卷带（TR） 类别：集成电路（IC） 存储器 描述：IC DRAM 256MBIT PARALLEL 60TFBGA

ISSI, Integrated Silicon Solution Inc

Package：60-TFBGA；包装：托盘 类别：集成电路（IC） 存储器 描述：IC DRAM 256MBIT PARALLEL 60TFBGA

ISSI, Integrated Silicon Solution Inc