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IS42S32400E-7BLI

4M x 32 128Mb SYNCHRONOUS DRAM

OVERVIEW ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 128Mb SDRAM is organized in 1Meg x 32 bit x 4 Banks. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully sync

文件:895.21 Kbytes 页数:60 Pages

ISSI

矽成半导体

IS42S32400E-7TI

4M x 32 128Mb SYNCHRONOUS DRAM

OVERVIEW ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 128Mb SDRAM is organized in 1Meg x 32 bit x 4 Banks. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully sync

文件:895.21 Kbytes 页数:60 Pages

ISSI

矽成半导体

IS42S32400E-7TL

4M x 32 128Mb SYNCHRONOUS DRAM

OVERVIEW ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 128Mb SDRAM is organized in 1Meg x 32 bit x 4 Banks. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully sync

文件:895.21 Kbytes 页数:60 Pages

ISSI

矽成半导体

IS42S32400E-7TLI

4M x 32 128Mb SYNCHRONOUS DRAM

OVERVIEW ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 128Mb SDRAM is organized in 1Meg x 32 bit x 4 Banks. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully sync

文件:895.21 Kbytes 页数:60 Pages

ISSI

矽成半导体

IS42S32400E

SDR SDRAM

·Synchronous, with 3.3V power supply\n·LVTTL interface\n·Programmable burst length (1, 2, 4, 8, full page)\n·Programmable burst sequence: Sequential/Interleave\n·Self refresh and Auto Refresh modes\n·Random column address every clock cycle\n·Programmable CAS latency (2, 3 clocks)\n·Burst read/write

ISSI

矽成半导体

IS42S32400E-7TLI

动态随机存储器(DRAM)

Integrated Silicon Solution

Integrated Silicon Solution

IS42S32400E-6BLI

Package:90-TFBGA;包装:卷带(TR) 类别:集成电路(IC) 存储器 描述:IC DRAM 128MBIT PARALLEL 90TFBGA

ISSI, Integrated Silicon Solution Inc

ISSI, Integrated Silicon Solution Inc

IS42S32400E-6BLI-TR

Package:90-TFBGA;包装:卷带(TR) 类别:集成电路(IC) 存储器 描述:IC DRAM 128MBIT PARALLEL 90TFBGA

ISSI, Integrated Silicon Solution Inc

ISSI, Integrated Silicon Solution Inc

IS42S32400E-6BL-TR

Package:90-TFBGA;包装:管件 类别:集成电路(IC) 存储器 描述:IC DRAM 128MBIT PARALLEL 90TFBGA

ISSI, Integrated Silicon Solution Inc

ISSI, Integrated Silicon Solution Inc

详细参数

  • 型号:

    IS42S32400E

  • 制造商:

    ISSI

  • 制造商全称:

    Integrated Silicon Solution, Inc

  • 功能描述:

    4M x 32 128Mb SYNCHRONOUS DRAM

供应商型号品牌批号封装库存备注价格
ISSI
24+/25+
214
原装正品现货库存价优
询价
ISSI
16+
TSSOP86
8800
进口原装大量现货热卖中
询价
ISSI
2016+
TSOP86
9000
只做原装,假一罚十,公司可开17%增值税发票!
询价
ISSI
23+
TSOP86
8000
原装正品,假一罚十
询价
ISSI
10+
BGA
1
询价
ISSI
24+
TSOP
5825
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
ISSI
25+
TSOP86
323
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
ISSI
23+
86-TSOPII
73390
专业分销产品!原装正品!价格优势!
询价
ISSI
24+
SSOP
5000
只做原装公司现货
询价
ISSI
1716+
?
8450
只做原装进口,假一罚十
询价
更多IS42S32400E供应商 更新时间2026-1-29 18:55:00