1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

文件：1.22195 Mbytes 页数：60 Pages

ETCList of Unclassifed Manufacturers

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1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

文件：1.22195 Mbytes 页数：60 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

文件：1.22195 Mbytes 页数：60 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

文件：1.22195 Mbytes 页数：60 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

文件：1.22195 Mbytes 页数：60 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

OVERVIEW\nISSI's 64Mb Synchronous DRAM IS42S16400B is organized as 1,048,576 bits x 16-bit x 4-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.FEATURES\n• Clo • Clock frequency: 166, 143 MHz\n• Fully synchronous; all signals referenced to a positive clock edge\n• Internal bank for hiding row access/precharge\n• Single 3.3V power supply\n• LVTTL interface\n• Programmable burst length\n– (1, 2, 4, 8, full page)\n• Programmable burst sequence: Sequential/Int;

ISSI

矽成半导体

1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

ISSI

矽成半导体

Package：60-TFBGA；包装：托盘 类别：集成电路（IC） 存储器 描述：IC DRAM 64MBIT PAR 60MINIBGA

ISSI, Integrated Silicon Solution Inc

Package：60-TFBGA；包装：卷带（TR） 类别：集成电路（IC） 存储器 描述：IC DRAM 64MBIT PAR 60MINIBGA

ISSI, Integrated Silicon Solution Inc

Package：60-TFBGA；包装：卷带（TR） 类别：集成电路（IC） 存储器 描述：IC DRAM 64MBIT PAR 60MINIBGA

ISSI, Integrated Silicon Solution Inc