IS42S16320B说明书PDF资料市场行情ISSI-114ic电子网

首页 >IS42S16320B>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
IS42S16320B	文件：913.2 Kbytes Page：61 Pages	64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM OVERVIEW ISSIs 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; 文件：913.2 Kbytes 页数：61 Pages	ISSI 矽成半导体	ISSI
IS42S16320B-6BL	文件：913.2 Kbytes Page：61 Pages	64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM OVERVIEW ISSIs 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; 文件：913.2 Kbytes 页数：61 Pages	ISSI 矽成半导体	ISSI
IS42S16320B-6BLI	文件：913.2 Kbytes Page：61 Pages	64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM OVERVIEW ISSIs 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; 文件：913.2 Kbytes 页数：61 Pages	ISSI 矽成半导体	ISSI
IS42S16320B-6TL	文件：913.2 Kbytes Page：61 Pages	64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM OVERVIEW ISSIs 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; 文件：913.2 Kbytes 页数：61 Pages	ISSI 矽成半导体	ISSI
IS42S16320B-6TLI	文件：913.2 Kbytes Page：61 Pages	64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM OVERVIEW ISSIs 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; 文件：913.2 Kbytes 页数：61 Pages	ISSI 矽成半导体	ISSI
IS42S16320B-75ETL	文件：913.2 Kbytes Page：61 Pages	64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM OVERVIEW ISSIs 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; 文件：913.2 Kbytes 页数：61 Pages	ISSI 矽成半导体	ISSI
IS42S16320B-75ETLI	文件：913.2 Kbytes Page：61 Pages	64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM OVERVIEW ISSIs 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; 文件：913.2 Kbytes 页数：61 Pages	ISSI 矽成半导体	ISSI
IS42S16320B-7BL	文件：913.2 Kbytes Page：61 Pages	64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM OVERVIEW ISSIs 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; 文件：913.2 Kbytes 页数：61 Pages	ISSI 矽成半导体	ISSI
IS42S16320B-7BLI	文件：913.2 Kbytes Page：61 Pages	64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM OVERVIEW ISSIs 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; 文件：913.2 Kbytes 页数：61 Pages	ISSI 矽成半导体	ISSI
IS42S16320B-7TL	文件：913.2 Kbytes Page：61 Pages	64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM OVERVIEW ISSIs 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; 文件：913.2 Kbytes 页数：61 Pages	ISSI 矽成半导体	ISSI

详细参数

型号：
IS42S16320B
功能描述：
动态随机存取存储器 512M(32Mx16) 166MHz S动态随机存取存储器, 3.3v
RoHS：
否
制造商：
ISSI
数据总线宽度：
16 bit
组织：
1 M x 16
封装/箱体：
SOJ-42
存储容量：
16 MB
访问时间：
50 ns
电源电压-最大：
7 V
电源电压-最小：
- 1 V
最大工作电流：
90 mA
最大工作温度：
+ 85 C
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
香港创芯邦电子有限公司	IS42S16320B	SSI	23+	TSSOP	1	现货或发货一天	询价
深圳市勤思达科技有限公司	IS42S16320B-6TL	ISSI	1215+	TSOP	150000	全新原装,绝对正品,公司大量现货供应.	询价
深圳市利加科技有限公司	IS42S16320B-6TL	ISSI	16+	TSSOP	8800	进口原装大量现货热卖中	询价
深圳市凌旭科技有限公司	IS42S16320B-7TL	ISSI	2016+	TSOP54	756	只做原装,假一罚十,公司可开17%增值税发票!	询价
深圳市毅创腾电子科技有限公司	IS42S16320B-7TLI	ISSI		SOP	256	正品原装--自家现货-实单可谈	询价
深圳市粤科源兴科技有限公司	IS42S16320B-7BL	ISSI	10+	BGA	1		询价
深圳市卓越微芯电子有限公司	IS42S16320B-6	ISSI	25+	TSOP	1756	百分百原装正品真实公司现货库存本公司只做原装可	询价
齐创科技(上海,北京,青岛)有限公司	IS42S16320B-7TL	ISSI	23+	TSOP	5000	原装正品,假一罚十	询价
深圳市豪迈兴电子有限公司	IS42S16320B-7TL	ISSI	24+	TSOP-54	5825	公司原厂原装现货假一罚十!特价出售!强势库存!	询价
深圳市恒创达实业有限公司	IS42S16320B-7TL	ISSI	17+	TSOP	6200	100%原装正品现货	询价

更多IS42S16320B供应商更新时间2026-1-31 9:04:00

客户服务网站合作

Tel：0755 8246 9263
Email：kf＠114ic.com
投诉建议：kf@114ic.com

Copyright © 2003-2026 114ic.com All Rights Reserved 粤ICP备05011613号粤公网安备 44030402000933号