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型号	下载订购	功能描述	制造商上传企业	LOGO
IS41LV16105B-50TLE	文件：131.5 Kbytes Page：20 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41LV16105B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41LV 文件：131.5 Kbytes 页数：20 Pages	ISSI 矽成半导体	ISSI
IS41LV16105B-50TLI	文件：131.5 Kbytes Page：20 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41LV16105B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41LV 文件：131.5 Kbytes 页数：20 Pages	ISSI 矽成半导体	ISSI
IS41LV16105B-60K	文件：131.5 Kbytes Page：20 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41LV16105B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41LV 文件：131.5 Kbytes 页数：20 Pages	ISSI 矽成半导体	ISSI
IS41LV16105B-60KE	文件：131.5 Kbytes Page：20 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41LV16105B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41LV 文件：131.5 Kbytes 页数：20 Pages	ISSI 矽成半导体	ISSI
IS41LV16105B-60KI	文件：131.5 Kbytes Page：20 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41LV16105B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41LV 文件：131.5 Kbytes 页数：20 Pages	ISSI 矽成半导体	ISSI
IS41LV16105B-60KL	文件：131.5 Kbytes Page：20 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41LV16105B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41LV 文件：131.5 Kbytes 页数：20 Pages	ISSI 矽成半导体	ISSI
IS41LV16105B-60KLE	文件：131.5 Kbytes Page：20 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41LV16105B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41LV 文件：131.5 Kbytes 页数：20 Pages	ISSI 矽成半导体	ISSI
IS41LV16105B-60KLI	文件：131.5 Kbytes Page：20 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41LV16105B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41LV 文件：131.5 Kbytes 页数：20 Pages	ISSI 矽成半导体	ISSI
IS41LV16105B-60T	文件：131.5 Kbytes Page：20 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41LV16105B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41LV 文件：131.5 Kbytes 页数：20 Pages	ISSI 矽成半导体	ISSI
IS41LV16105B-60TE	文件：131.5 Kbytes Page：20 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41LV16105B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41LV 文件：131.5 Kbytes 页数：20 Pages	ISSI 矽成半导体	ISSI

详细参数

型号：
IS41LV16105
制造商：
ICSI
制造商全称：
Integrated Circuit Solution Inc
功能描述：
1M x 16(16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市一线半导体有限公司	IS41LV16105B-50TI		24+	SOP	7003		询价
深圳市毅创腾电子科技有限公司	IS41LV16105B-50K	ISSI		SOJ42	320	正品原装--自家现货-实单可谈	询价
芯有半导体（深圳）有限公司	IS41LV16105-50T	ISSI	9938+	TSOP	4	原装	询价
深圳市凌旭科技有限公司	IS41LV16105B-50K	ISSI	2016+	SOJ42	1980	只做原装,假一罚十,公司可开17%增值税发票!	询价
深圳市卓越微芯电子有限公司	IS41LV16105-50T1	ISSI	25+	TSOP44	698	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市豪迈兴电子有限公司	IS41LV16105-50TI	ISSI	24+	TSOP	5825	公司原厂原装现货假一罚十!特价出售!强势库存!	询价
深圳市鹏和科技有限公司	IS41LV16105-50T1	ISSI	24+	TSOP44	5000	只做原装公司现货	询价
上海专毅电子科技有限公司	IS41LV16105-50T	ISSI	17+	TSOP44	9988	只做原装进口,自己库存	询价
上海鑫科润电子科技有限公司	IS41LV16105-50TI	ISSI	02+		290	原装现货海量库存欢迎咨询	询价
深圳市佳鑫美电子科技有限公司	IS41LV1610550TI	ISSI	25+	TSOP	4500	原装正品!公司现货!欢迎来电!	询价

更多IS41LV16105供应商更新时间2026-2-1 16:30:00

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