IS41C16100数据表ic资料供应代理ISSI第2页-114ic电子网

首页 >IS41C16100>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
IS41C16100-60TI	文件：123.63 Kbytes Page：20 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 文件：123.63 Kbytes 页数：20 Pages	ISSI 矽成半导体	ISSI
IS41C16100C	文件：615.45 Kbytes Page：22 Pages	16Mb DRAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41C16100CandIS41LV16100Care1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer a cycle access called Extended Data Out (EDO) Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 3 文件：615.45 Kbytes 页数：22 Pages	ISSI 矽成半导体	ISSI
IS41C16100S	文件：533.71 Kbytes Page：20 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 文件：533.71 Kbytes 页数：20 Pages	ICSI	ICSI
IS41C16100S-45K	文件：533.71 Kbytes Page：20 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 文件：533.71 Kbytes 页数：20 Pages	ICSI	ICSI
IS41C16100S-45KI	文件：533.71 Kbytes Page：20 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 文件：533.71 Kbytes 页数：20 Pages	ICSI	ICSI
IS41C16100S-45T	文件：533.71 Kbytes Page：20 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 文件：533.71 Kbytes 页数：20 Pages	ICSI	ICSI
IS41C16100S-45TI	文件：533.71 Kbytes Page：20 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 文件：533.71 Kbytes 页数：20 Pages	ICSI	ICSI
IS41C16100S-50K	文件：533.71 Kbytes Page：20 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 文件：533.71 Kbytes 页数：20 Pages	ICSI	ICSI
IS41C16100S-50KI	文件：533.71 Kbytes Page：20 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 文件：533.71 Kbytes 页数：20 Pages	ICSI	ICSI
IS41C16100S-50T	文件：533.71 Kbytes Page：20 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 文件：533.71 Kbytes 页数：20 Pages	ICSI	ICSI

详细参数

型号：
IS41C16100
制造商：
ISSI
制造商全称：
Integrated Silicon Solution, Inc
功能描述：
1M x 16(16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市一线半导体有限公司	IS41C16100S-50T		24+	SOP	7003		询价
深圳市星佑电子有限公司	IS41C16100-50K	INTEGRATEDSI	05+	原厂原装	4230	只做全新原装真实现货供应	询价
深圳市毅创腾电子科技有限公司	IS41C16100-50KL	ISSI		SOJ	8000	正品原装--自家现货-实单可谈	询价
深圳市益百分电子有限公司	IS41C16100-50T	ISSI	10+	TSOP	9000	原装现货价格有优势量多可发货	询价
齐创科技(上海,北京,青岛)有限公司	IS41C16100S-50K	ICSI	23+	SOJ	5000	原装正品,假一罚十	询价
深圳市正迈科技有限公司	IS41C16100-50KL	ISSI	23+	SOP	20000	原厂授权代理分销现货只做原装正迈科技样品支持现货	询价
深圳市豪迈兴电子有限公司	IS41C16100S-50K	ISSI	24+	SOJ	5825	公司原厂原装现货假一罚十!特价出售!强势库存!	询价
深圳市卓越微芯电子有限公司	IS41C16100C-50TLI	ISSI	25+	TSOP44	20	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市弘为电子有限公司	IS41C16100S-50K	ICSI	24+	SOJ/42	1068	原装现货假一罚十	询价
谛辉(北京/上海/青岛 )电子科技有限公司	IS41C16100-60K	ISSI	25+	QFN	18000	原厂直接发货进口原装	询价

更多IS41C16100供应商更新时间2025-10-6 16:30:00

客户服务网站合作

Tel：0755 8246 9263
Email：kf＠114ic.com
投诉建议：kf@114ic.com

Copyright © 2003-2025 114ic.com All Rights Reserved 粤ICP备05011613号粤公网安备 44030402000933号