HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS

DESCRIPTION The IS357 is an optically coupled isolator consisting of an infrared light emitting diode and NPN silicon photo transistor in a space efficient dual in line plastic package. FEATURES ● Marked as FPT1. ● Current Transfer Ratio MIN. 50 ● Isolation Voltage (3.75kVRMS,5.3kVPK) ● All

文件：58.54 Kbytes 页数：2 Pages

ISOCOM

英国安数光

HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATIORS

DESCRIPTION The IS357 is an optically coupled isolator consisting of an infrared light emitting diode and NPN silicon photo transistor in a space efficient dual in line plastic package. FEATURES ● Marked as FPT1. ● Current Transfer Ratio MIN. 50% ● Isolation Voltage (3.75kVRMS,5.3kVPK) ●

文件：58.54 Kbytes 页数：2 Pages

ISOCOM

英国安数光

3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE

FEATURES  Flexible & Efficient Memory Architecture - Organization: 128Mb x8 - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell  Highest performance - Read Performance - R

文件：1.76532 Mbytes 页数：56 Pages

ISSI

矽成半导体

3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE

FEATURES  Flexible & Efficient Memory Architecture - Organization: 128Mb x8 - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell  Highest performance - Read Performance - R

文件：1.76532 Mbytes 页数：56 Pages

ISSI

矽成半导体

3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE

FEATURES  Flexible & Efficient Memory Architecture - Organization: 128Mb x8 - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell  Highest performance - Read Performance - R

文件：1.76532 Mbytes 页数：56 Pages

ISSI

矽成半导体

3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE

FEATURES  Flexible & Efficient Memory Architecture - Organization: 128Mb x8 - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell  Highest performance - Read Performance - R

文件：1.76532 Mbytes 页数：56 Pages

ISSI

矽成半导体

3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE

FEATURES  Flexible & Efficient Memory Architecture - Organization: 128Mb x8 - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell  Highest performance - Read Performance - R

文件：1.76532 Mbytes 页数：56 Pages

ISSI

矽成半导体

3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE

FEATURES  Flexible & Efficient Memory Architecture - Organization: 128Mb x8 - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell  Highest performance - Read Performance - R

文件：1.76532 Mbytes 页数：56 Pages

ISSI

矽成半导体

3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE

FEATURES  Flexible & Efficient Memory Architecture - Organization: 128Mb x8 - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell  Highest performance - Read Performance - R

文件：1.76532 Mbytes 页数：56 Pages

ISSI

矽成半导体

3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE

FEATURES  Flexible & Efficient Memory Architecture - Organization: 128Mb x8 - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell  Highest performance - Read Performance - R

文件：1.76532 Mbytes 页数：56 Pages

ISSI

矽成半导体