IS31FL3236A中文资料下载批发供应ISSI第4页-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
IS34ML04G084-TLA1	文件：1.49971 Mbytes Page：66 Pages	3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE FEATURES  Flexible & Efficient Memory Architecture - Organization: 512Mb x8 - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell  Highest performance - Read Performance - 文件：1.49971 Mbytes 页数：66 Pages	ISSI 矽成半导体	ISSI
IS34ML04G084-TLA2	文件：1.49971 Mbytes Page：66 Pages	3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE FEATURES  Flexible & Efficient Memory Architecture - Organization: 512Mb x8 - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell  Highest performance - Read Performance - 文件：1.49971 Mbytes 页数：66 Pages	ISSI 矽成半导体	ISSI
IS34ML04G084-TLE	文件：1.49971 Mbytes Page：66 Pages	3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE FEATURES  Flexible & Efficient Memory Architecture - Organization: 512Mb x8 - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell  Highest performance - Read Performance - 文件：1.49971 Mbytes 页数：66 Pages	ISSI 矽成半导体	ISSI
IS34ML04G084-TLI	文件：1.49971 Mbytes Page：66 Pages	3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE FEATURES  Flexible & Efficient Memory Architecture - Organization: 512Mb x8 - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell  Highest performance - Read Performance - 文件：1.49971 Mbytes 页数：66 Pages	ISSI 矽成半导体	ISSI
IS34MW04G084	文件：2.37765 Mbytes Page：67 Pages	1.8V X8/X16 NAND FLASH MEMORY STANDARD NAND FEATURES  Flexible & Efficient Memory Architecture - Memory Cell: 1bit/Memory Cell - Organization: 512Mb x8 /256Mb x16 - X8: - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - X16: - - Memory Cell Arr 文件：2.37765 Mbytes 页数：67 Pages	ISSI 矽成半导体	ISSI
IS34MW04G084-TLA1	文件：2.37765 Mbytes Page：67 Pages	1.8V X8/X16 NAND FLASH MEMORY STANDARD NAND FEATURES  Flexible & Efficient Memory Architecture - Memory Cell: 1bit/Memory Cell - Organization: 512Mb x8 /256Mb x16 - X8: - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - X16: - - Memory Cell Arr 文件：2.37765 Mbytes 页数：67 Pages	ISSI 矽成半导体	ISSI
IS34MW04G084-TLA2	文件：2.37765 Mbytes Page：67 Pages	1.8V X8/X16 NAND FLASH MEMORY STANDARD NAND FEATURES  Flexible & Efficient Memory Architecture - Memory Cell: 1bit/Memory Cell - Organization: 512Mb x8 /256Mb x16 - X8: - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - X16: - - Memory Cell Arr 文件：2.37765 Mbytes 页数：67 Pages	ISSI 矽成半导体	ISSI
IS34MW04G084-TLE	文件：2.37765 Mbytes Page：67 Pages	1.8V X8/X16 NAND FLASH MEMORY STANDARD NAND FEATURES  Flexible & Efficient Memory Architecture - Memory Cell: 1bit/Memory Cell - Organization: 512Mb x8 /256Mb x16 - X8: - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - X16: - - Memory Cell Arr 文件：2.37765 Mbytes 页数：67 Pages	ISSI 矽成半导体	ISSI
IS34MW04G084-TLI	文件：2.37765 Mbytes Page：67 Pages	1.8V X8/X16 NAND FLASH MEMORY STANDARD NAND FEATURES  Flexible & Efficient Memory Architecture - Memory Cell: 1bit/Memory Cell - Organization: 512Mb x8 /256Mb x16 - X8: - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - X16: - - Memory Cell Arr 文件：2.37765 Mbytes 页数：67 Pages	ISSI 矽成半导体	ISSI
IS34MW04G088	文件：2.095429 Mbytes Page：73 Pages	1.8V X8/X16 NAND FLASH MEMORY STANDARD NAND INTERFACE FEATURES • Flexible & Efficient Memory Architecture - Memory Cell: 1bit/Memory Cell - Organization: 512Mb x8, 256Mb x16 - Page Size for x8: (4K + 256) Bytes - Page Size for x16: (2K + 128) words - Block Size for x8: 64x (4K + 256) Bytes - Block Size for x16: 64x (2K + 128) words - Number 文件：2.095429 Mbytes 页数：73 Pages	ISSI 矽成半导体	ISSI

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供应商	型号	品牌	批号	封装	库存	备注	价格
贸泽芯城（深圳）电子科技有限公司	IS31FL3236A	替代料	23+		30000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
万三科技(深圳)有限公司	IS31FL3236A	ISSI(美国芯成)	25+	封装	500000	源自原厂成本,高价回收工厂呆滞	询价
瀚佳科技(深圳)有限公司	IS31FL3236A-QFLS2-TR	ISSI, Integrated Silicon Solut	24+	44-PowerWFQFN	39500	一级代理/放心采购	询价
深圳市芯连胜科技有限公司	IS31FL3236A-QFLS2-TR	Lumissil	20+	QFN-44	4520	原装正品现货	询价
深圳市澳亿芯电子科技有限公司	IS31FL3236A-QFLS2-TR	ISSI	25+	QFN44	2500	优势	询价
艾睿（深圳）半导体有限公司	IS31FL3236A-QFLS2-TR	ISSI	2447	C0603	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
深圳市凯睿晟科技有限公司	IS31FL3236A-QFLS2-TR	ISSI	21+	QFN	20000	原装优势实单必成可开13点发票	询价
深圳市科雨电子有限公司	IS31FL3236A-QFLS2-TR	ISSI	25+	QFN-44	3854	就找我吧!--邀您体验愉快问购元件!	询价
深圳市凌旭科技有限公司	IS31FL3236A-QFLS2-TR	ISSI	21+	QFN44	2086		询价
深圳市正纳电子有限公司	IS31FL3236A-QFLS2-TR	NA	23+	NA	26094	10年以上分销经验原装进口正品,做服务型企业	询价

更多IS3供应商更新时间2026-1-22 14:25:00

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