电平移位门极驱动

600 V High Side Driver IC with typical 0.5 A source and 0.5 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. ·Floating channel designed for bootstrap operation\n ·Fully operational to +600 V\n ·Tolerant to negative transient voltage, dV/dt immune\n ·Gate drive supply range from 10 V to 20 V\n ·Undervoltage lockout\n ·CMOS Schmitt-triggered inputs with pull-down\n ·Outputs in phase with inputs (IRS212;

Infineon

英飞凌

Floating channel designed for bootstrap operation

文件：357.87 Kbytes 页数：18 Pages

IRF

Package：8-SOIC（0.154"，3.90mm 宽）；包装：管件 类别：集成电路（IC） 栅极驱动器 描述：IC GATE DRVR HIGH-SIDE 8SOIC

INFINEON

英飞凌

Package：8-SOIC（0.154"，3.90mm 宽）；包装：管件 类别：集成电路（IC） 栅极驱动器 描述：IC GATE DRVR HIGH-SIDE 8SOIC

INFINEON

英飞凌