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IRS2104STRPBF

HALF-BRIDGE DRIVER

Description The IRS2104 is a high voltage, high speed power MOSFET and IGBT driver with dependent high- and lowside referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL

文件:255.98 Kbytes 页数:15 Pages

IRF

IRS2104STRPbF

HALF-BRIDGE DRIVER

文件:665.13 Kbytes 页数:15 Pages

IRF

IRS2104STRPBF

Package:8-SOIC(0.154",3.90mm 宽);包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 类别:集成电路(IC) 栅极驱动器 描述:IC GATE DRVR HALF-BRIDGE 8SOIC

INFINEON

英飞凌

MPC2104

256KB and 512KB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms

The MPC2104/5/6/7 are designed to provide burstable, high performance L2 cache for the PowerPC 60x microprocessor family in conformance with the PowerPC Reference Platform (PReP) and the PowerPC Common Hardware Reference Platform (CHRP) specifications. These products utilize synchronous or asynchr

文件:228.15 Kbytes 页数:24 Pages

MOTOROLA

摩托罗拉

MPC2104P

256KB/512KB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms

The MPC2104P (256KB) and MPC2105P (512KB) are designed to provide burstable, high performance L2 cache for the PowerPC 60x microprocessor family in conformance with the PowerPC Reference Platform (PReP) and the PowerPC Common Hardware Reference Platform (CHRP) specifications. All of these cache m

文件:158.43 Kbytes 页数:16 Pages

MOTOROLA

摩托罗拉

TP2104

P-Channel Enhancement-Mode Vertical DMOS FETs

General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high in

文件:455.81 Kbytes 页数:4 Pages

SUTEX

产品属性

  • 产品编号:

    IRS2104STRPBF

  • 制造商:

    Infineon Technologies

  • 类别:

    集成电路(IC) > 栅极驱动器

  • 包装:

    卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带

  • 驱动配置:

    半桥

  • 通道类型:

    同步

  • 栅极类型:

    IGBT,N 沟道 MOSFET

  • 电压 - 供电:

    10V ~ 20V

  • 逻辑电压 - VIL,VIH:

    0.8V,2.5V

  • 电流 - 峰值输出(灌入,拉出):

    290mA,600mA

  • 输入类型:

    非反相

  • 上升/下降时间(典型值):

    70ns,35ns

  • 工作温度:

    -40°C ~ 150°C(TJ)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    8-SOIC(0.154",3.90mm 宽)

  • 供应商器件封装:

    8-SOIC

  • 描述:

    IC GATE DRVR HALF-BRIDGE 8SOIC

供应商型号品牌批号封装库存备注价格
IR
25+
SOIC-8
9600
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
IR
2020+
SOP-8
22000
全新原装正品 现货库存 价格优势
询价
INFINEON/英飞凌
25+
SOP-8
12496
IR原装正品IRS2104STRPBF即刻询购立享优惠#长期有货
询价
IR
16+
SOP-8
36000
原装正品,优势库存81
询价
IR
23+
SOIC-8
65400
询价
IR
2021+
SOIC-8
9450
原装现货。
询价
IR
21+
SOP-8
8000
原装正品现货假一罚十
询价
IR
23+
SOP-8
22500
原厂原装正品
询价
INFINEON/英飞凌
2021+
SOIC-8
9000
原装现货,随时欢迎询价
询价
INFINEON
25+
SOIC-8_150
19700
只做原装 有挂有货 假一赔十
询价
更多IRS2104STRPBF供应商 更新时间2026-8-3 14:08:00