N-Channel MOSFET Transistor

DESCRIPTION • High DC Current Gain-hFE= 750(Min)@ IC= 15A • High Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for general purpose amplifier and low speed s

文件：336.29 Kbytes 页数：2 Pages

ISC

无锡固电

High Frequency Synchronous Buck Converters for Computer Processor Power

文件：1.23677 Mbytes 页数：11 Pages

KERSEMI

采用 D-Pak 封装的 30V 单 N 通道 HEXFET 功率 MOSFET

\n优势:\n• Optimized for broadest availability from distribution partners\n• Product qualification according to JEDEC standard\n• Optimized for 5V gate-drive voltage (called Logic level)\n• Industry standard surface-mount power package\n• Capable of being wave-soldered\n \n  ;

Infineon

英飞凌

HEXFET Power MOSFET

Applications ● High Frequency Synchronous Buck Converters for Computer Processor Power ● High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use ● Lead-Free Benefits ● Very Low RDS(on) at 4.5V VGS ● Ultra-Low Gate Impedance ● Fully

文件：364.24 Kbytes 页数：11 Pages

IRF

Ultra-Low Gate Impedance

文件：298.78 Kbytes 页数：12 Pages

IRF

Ultra-Low Gate Impedance

文件：298.78 Kbytes 页数：12 Pages

IRF

Compatible with Existing Surface Mount Techniques

文件：265.2 Kbytes 页数：12 Pages

IRF

Compatible with Existing Surface Mount Techniques

文件：265.2 Kbytes 页数：12 Pages

IRF

30V 单个 N 通道 HEXFET Power MOSFET, 采用 D-Pak 封装

\n优势:\n• Optimized for broadest availability from distribution partners\n• Product qualification according to JEDEC standard\n• Optimized for 5V gate-drive voltage (called Logic level)\n• Industry standard surface-mount power package\n• Capable of being wave-soldered\n \n  ;

Infineon

英飞凌