isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 171A@ TC=25℃ · Drain Source Voltage -VDSS= 30V(Min) · Static Drain-Source On-Resistance -RDS(on) = 2.4mΩ(Max)@VGS= 10V DESCRIPTION · Optimized for UPS/Inverter Applications · Low Voltage Power Tools

文件：395.17 Kbytes 页数：2 Pages

ISC

无锡固电

30V 逻辑电平单 N 通道 StrongIRFET ™功率 MOSFET，采用 TO-220 封装

\n优势:\n• Optimized for broadest availability from distribution partners\n• Product qualification according to JEDEC standard\n• Optimized for 5V gate-drive voltage (called Logic level)\n• Industry standard through-hole power package\n• High-current carrying capability package (upto 195A, die-size de;

Infineon

英飞凌

HEXFET짰 Power MOSFET

文件：486.84 Kbytes 页数：9 Pages

INFINEON

英飞凌

Optimized for UPS/Inverter Applications

文件：697.24 Kbytes 页数：8 Pages

IRF

Optimized for UPS/Inverter Applications

文件：697.24 Kbytes 页数：8 Pages

IRF