首页 >IRG4BC30WPBF功率三极管>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
INSULATEDGATEBIPOLARTRANSISTOR | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR Features •UltraFast:Optimizedforhighoperating frequencies8-40kHzinhardswitching, >200kHzinresonantmode •IndustrystandardD2Pak&TO-262package •Lead-Free,RoHSCompliant •AutomotiveQualified* Benefits •TypicalApplications:SMPS,PFC | IRF International Rectifier | IRF | ||
IGBT DESCRIPTION ·LowVCE(ON)andSwitchingLosses ·HighSpeedSwitching ·LowPowerLoss APPLICATIONS ·Welding ·PFC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
INSULATEDGATEBIPOLARTRANSISTOR Features •UltraFast:Optimizedforhighoperating frequencies8-40kHzinhardswitching, >200kHzinresonantmode •IndustrystandardD2Pak&TO-262package •Lead-Free,RoHSCompliant •AutomotiveQualified* Benefits •TypicalApplications:SMPS,PFC | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR Features •UltraFast:Optimizedforhighoperating frequencies8-40kHzinhardswitching, >200kHzinresonantmode •IndustrystandardD2Pak&TO-262package •Lead-Free,RoHSCompliant •AutomotiveQualified* Benefits •TypicalApplications:SMPS,PFC | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR Features •UltraFast:Optimizedforhighoperating frequencies8-40kHzinhardswitching, >200kHzinresonantmode •IndustrystandardD2Pak&TO-262package •Lead-Free,RoHSCompliant •AutomotiveQualified* Benefits •TypicalApplications:SMPS,PFC | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=2.21V,@Vge=15V,Ic=16A) ShortCircuitRatedUltraFastIGBT Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •tighterparameterdistributionandhigherefficiencythanpreviousgenerations | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.95V,@Vge=15V,Ic=12A) Features •UltraFast:Optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode •Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 •IGBTco-packagedwithHEXFREDTMultrafast, ultra- | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)max.=2.70V,@Vge=15V,Ic=12A) Features •DesignedexpresslyforSwitch-ModePowerSupplyandPFC(powerfactorcorrection)applications •Industry-benchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies •50reductionofEoffparameter •LowIGBTconductionlosses •Latest-generationIGBTdesign | IRF International Rectifier | IRF |
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