G4BC30KD中文资料IRF数据手册PDF规格书

厂商型号	G4BC30KD
功能描述	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
文件大小	196.13 Kbytes
页面数量	10 页
生产厂商	IRF
网址	网址
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-12-13 20:00:00
人工找货	G4BC30KD价格和库存，欢迎联系客服免费人工找货

Short Circuit Rated UltraFast IGBT

特性 Features

• High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V

• Combines low conduction losses with high switching speed

• tighter parameter distribution and higher efficiency than previous generations

• IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes

Benefits

• Latest generation 4 IGBTs offer highest power density motor controls possible

• HEXFREDTM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses

• This part replaces the IRGBC30KD2 and IRGBC30MD2 products

• For hints see design tip 97003