G4BC30UD中文资料IRF数据手册PDF规格书

厂商型号	G4BC30UD
功能描述	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A)
文件大小	234.03 Kbytes
页面数量	10 页
生产厂商	IRF
网址	网址
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-10-31 11:10:00
人工找货	G4BC30UD价格和库存，欢迎联系客服免费人工找货

特性 Features

• UltraFast: Optimized for high operating

frequencies 8-40 kHz in hard switching, >200

kHz in resonant mode

• Generation 4 IGBT design provides tighter

parameter distribution and higher efficiency than

Generation 3

• IGBT co-packaged with HEXFREDTM ultrafast,

ultra-soft-recovery anti-parallel diodes for use in

bridge configurations

• Industry standard TO-220AB package

Benefits

• Generation -4 IGBTs offer highest efficiencies

available

• IGBTs optimized for specific application conditions

• HEXFRED diodes optimized for performance with

IGBTs . Minimized recovery characteristics require

less/no snubbing

• Designed to be a drop-in replacement for equivalent

industry-standard Generation 3 IR IGBTs