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IRG4BC20UD-SPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features •UltraFast:Optimizedforhighoperatingfrequencies 8-40kHzinhardswitching,>200kHzinresonant mode •Generation4IGBTdesignprovidestighterpara- meterdistributionandhigherefficiencythan Generation3 •IGBTco-packagedwithHEXFREDTMultrafast,

IRF

International Rectifier

IRG4BC20UD-SPBF

ULTRAFASTCOPACKIGBT

IRF

International Rectifier

IRG4BC20UDSRP

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features •UltraFast:Optimizedforhighoperatingfrequencies 8-40kHzinhardswitching,>200kHzinresonant mode •Generation4IGBTdesignprovidestighterparameter distributionandhigherefficiencythan Generation3 •IGBTco-packagedwithHEXFREDTMultrafast, ultra-

IRF

International Rectifier

IRG4BC20UDSTRRP

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features •UltraFast:Optimizedforhighoperatingfrequencies 8-40kHzinhardswitching,>200kHzinresonant mode •Generation4IGBTdesignprovidestighterparameter distributionandhigherefficiencythan Generation3 •IGBTco-packagedwithHEXFREDTMultrafast, ultra-

IRF

International Rectifier

IRG4BC20UPBF

ULTRAFASTSPEEDIGBT

IRF

International Rectifier

IRG4BC20UPBF

UltraFastSpeedIGBT

Features •UltraFast:optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IndustrystandardTO-220ABpackage •Lead-Free Benefits •Generati

IRF

International Rectifier

IRG4BC20W

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.16V,@Vge=15V,Ic=6.5A)

Features •DesignedexpresslyforSwitch-ModePowerSupplyandPFC(powerfactorcorrection)applications •Industry-benchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies •50reductionofEoffparameter •LowIGBTconductionlosses •Latest-generationIGBTde

IRF

International Rectifier

IRG4BC20WPBF

INSULATEDGATEBIPOLARTRANSISTOR

Features •DesignedexpresslyforSwitch-ModePowerSupplyandPFC(powerfactorcorrection)applications •Industry-benchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies •50reductionofEoffparameter •LowIGBTconductionlosses •Latest-generationIGBTdesignandc

IRF

International Rectifier

IRG4BC20WPBF

INSULATEDGATEBIPOLARTRANSISTOR

IRF

International Rectifier

IRG4BC20WS

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.16V,@Vge=15V,Ic=6.5A)

Features •DesignedexpresslyforSwitch-ModePowerSupplyandPFC(powerfactorcorrection)applications •Industry-benchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies •50reductionofEoffparameter •LowIGBTconductionlosses •Latest-generationIGBTde

IRF

International Rectifier

详细参数

  • 型号:

    IRG4BC20MDS

  • 制造商:

    IRF

  • 制造商全称:

    International Rectifier

  • 功能描述:

    INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A)

供应商型号品牌批号封装库存备注价格
IRF
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
IR
22+
TO
6000
终端可免费供样,支持BOM配单
询价
IR
23+
TO
8000
只做原装现货
询价
IR
23+
TO
7000
询价
Infineon Technologies
23+
D2PAK
9000
原装正品,支持实单
询价
IR
05+
原厂原装
1751
只做全新原装真实现货供应
询价
IR
2015+
D2-Pak
12500
全新原装,现货库存长期供应
询价
IR
24+
TO-263
44
询价
IR
24+
原厂封装
100
原装现货假一罚十
询价
IR
24+
65230
询价
更多IRG4BC20MDS供应商 更新时间2025-7-28 9:07:00