IRG4BC15UD-L

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.02V, @Vge=15V, Ic=7.8A)

UltraFastCoPackIGBT Features •UltraFast:Optimizedforhighfrequenciesfrom10to 30kHzinhardswitching •IGBTCo-packagedwithultra-soft-recovery antiparalleldiode •IndustrystandardD2Pak&TO-262packages Benefits •BestValueforApplianceandIndustrialApplications

IRG4BC15UD-L

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIOD

UltraFastCoPackIGBT Features •UltraFast:Optimizedforhighfrequenciesfrom10to 30kHzinhardswitching •IGBTCo-packagedwithultra-soft-recovery antiparalleldiode •IndustrystandardD2Pak&TO-262packages •Lead-Free Benefits •BestValueforApplianceandIndustrial

IRG4BC15UD-L

600V UltraFast 10-30 kHz Copack IGBT in a TO-262 package; • 超快: •针对 10 至 30 kHz 的硬开关高频率进行了优化\n• 与超快软恢复反并联二极管联合封装的 IGBT\n• 无铅\n\n优势:\n• 为电器和工业应用创造出色价值\n• 高噪声抗扰度的“Positive Only”栅极驱动器- 不必使用负偏压的栅极驱动器\n• 低 EMI 设计 - 对缓冲的要求极少甚至不需要\n• 适合桥电路应用的单封装开关\n• 与高压栅极驱动器 IC 兼容\n• 可接受更简单的栅极驱动器\n;

600V IGBT 与超快 10-30 kHz 软恢复二极管联合封装到 TO-262 封装中\n

IRG4BC15UD-L

Package：TO-262-3，长引线，I²Pak，TO-262AA；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 14A 49W TO262

IRG4BC15UD-LPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIOD

UltraFastCoPackIGBT Features •UltraFast:Optimizedforhighfrequenciesfrom10to 30kHzinhardswitching •IGBTCo-packagedwithultra-soft-recovery antiparalleldiode •IndustrystandardD2Pak&TO-262packages •Lead-Free Benefits •BestValueforApplianceandIndustrial

IRG4BC15UD-LPBF

Package：TO-262-3，长引线，I²Pak，TO-262AA；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 14A 49W TO262