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IRG4BC10SD-S

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A)

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IRG4BC10SD-S

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IRG4BC10SD-SPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IRG4BC10K

ShortCircuitRatedUltraFastIGBT

ShortCircuitRatedUltraFastIGBT Features •ShortCircuitRatedUltraFast:Optimizedforhighoperatingfrequencies>5.0kHz,andShortCircuitRatedto10µs@125°C,VGE=15V •Generation4IGBTdesignprovideshigherefficiencythanGeneration3 •IndustrystandardTO-220ABpackage Bene

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IRG4BC10KD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.2.39V,@Vge=15V,Ic=5.0A)

ShortCircuitRatedUltraFastIGBT Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •Tighterparameterdistributionandhigherefficiencythanpreviousgenerations

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IRG4BC10KDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

ShortCircuitRatedUltraFastIGBT Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •Tighterparameterdistributionandhigherefficiencythanpreviousgenerations

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IRG4BC10KDPBF

Highshortcircuitratingoptimizedformotorcontrol

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IRG4BC10KDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features •Highshortcircuitratingoptimizedformotorcontrol, tsc=10µs,@360VVCE(start),TJ=125°C, VGE=15V •Combineslowconductionlosseswithhigh switchingspeed •Tighterparameterdistributionandhigherefficiency thanpreviousgenerations •IGBTco-packagedw

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IRG4BC10KPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features •Highshortcircuitratingoptimizedformotorcontrol, tsc=10µs,@360VVCE(start),TJ=125°C, VGE=15V •Combineslowconductionlosseswithhigh switchingspeed •Tighterparameterdistributionandhigherefficiency thanpreviousgenerations •IGBTco-packagedw

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IRG4BC10S

INSULATEDGATEBIPOLARTRANSISTORStandardSpeedIGBT(Vces=600V,Vce(on)typ.1.10V,@Vge=15V,Ic=2.0A)

Features •Extremelylowvoltagedrop;1.1Vtypicalat2A •S-Speed:Minimizespowerdissipationatupto3KHzPWMfrequencyininverterdrives,upto4KHzinbrushlessDCdrives,upto2KHzinChopperApplications •VeryTightVce(on)distribution •IndustrystandardTO-220ABpackage Benef

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IRG4BC10SD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

StandardSpeedCoPackIGBT Features •Extremelylowvoltagedrop1.1Vtyp.@2A •S-Series:Minimizespowerdissipationatupto3KHzPWMfrequencyininverterdrives,upto4KHzinbrushlessDCdrives. •VeryTightVce(on)distribution •IGBTco-packagedwithHEXFREDTMultrafast,ultra-so

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IRG4BC10SD-L

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IRG4BC10SD-L

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.10V,@Vge=15V,Ic=2.0A)

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IRG4BC10SD-LPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IRG4BC10SDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

StandardSpeedCoPackIGBT Features •Extremelylowvoltagedrop1.1Vtyp.@2A •S-Series:Minimizespowerdissipationatupto3KHzPWMfrequencyininverterdrives,upto4KHzinbrushlessDCdrives. •VeryTightVce(on)distribution •IGBTco-packagedwithHEXFREDTMultrafast,ultra-so

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IRG4BC10SPBF

INSULATEDGATEBIPOLARTRANSISTOR

Features •Extremelylowvoltagedrop;1.1Vtypicalat2A •S-Speed:Minimizespowerdissipationatupto3KHzPWMfrequencyininverterdrives,upto4 KHzinbrushlessDCdrives,upto2KHzinChopperApplications •VeryTightVce(on)distribution •IndustrystandardTO-220ABpackage •

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IRG4BC10UD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=2.15V,@Vge=15V,Ic=5.0A)

UltraFastCoPackIGBT Features •UltraFast:Optimizedforhighoperating upto80kHzinhardswitching,>200kHzin resonantmode •Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan previousGeneration •IGBTco-packagedwith

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IRG4BC10UDPBF

INSULATEDGATEBIPOLARTRANSISROTWITHULTRAFASTSOFRRECOVERYDIODEUltraFastCoPackIGBT

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IRG4BC10UDPBF

INDUSTRYSTANDARDTO-220ABPACKAGE

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

详细参数

  • 型号:

    IRG4BC10SD-S

  • 功能描述:

    DIODE IGBT 600V 14A D2PAK

  • RoHS:

  • 类别:

    分离式半导体产品 >> IGBT - 单路

  • 系列:

    -

  • 标准包装:

    30

  • 系列:

    GenX3™ IGBT

  • 类型:

    PT 电压 -

  • 集电极发射极击穿(最大):

    1200V Vge,

  • Ic时的最大Vce(开):

    3V @ 15V,100A 电流 -

  • 集电极(Ic)(最大):

    200A 功率 -

  • 最大:

    830W

  • 输入类型:

    标准

  • 安装类型:

    通孔

  • 封装/外壳:

    TO-247-3

  • 供应商设备封装:

    PLUS247?-3

  • 包装:

    管件

供应商型号品牌批号封装库存备注价格
IR
23+
D2-Pak
8600
全新原装现货
询价
IR
08+(pbfree)
D2-Pak
8866
询价
IR
2015+
D2-Pak
12500
全新原装,现货库存长期供应
询价
IRF
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
InfineonTechnologies
2019+
D2PAK
65500
原装正品货到付款,价格优势!
询价
23+
N/A
30050
正品授权货源可靠
询价
IR
2020+
D2-PAK
16800
绝对原装进口现货,假一赔十,价格优势!?
询价
IR
21+
TO-263
50000
终端可免费提供样品,欢迎咨询
询价
IR
23+
TO-263
90000
只做原厂渠道价格优势可提供技术支持
询价
INFINEON
1503+
TO-263
3000
就找我吧!--邀您体验愉快问购元件!
询价
更多IRG4BC10SD-S供应商 更新时间2024-4-27 14:02:00