TRANSISTOR N-CHANNEL(Vdss=200V, Rds(on)=0.060ohm, Id=45A*)

200 Volt, 0.060Ω, HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advan

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IRF

Simple Drive Requirements

文件：37.28 Kbytes 页数：4 Pages

IRF

N-CHANNEL HEXFET® TRANSISTOR

200 Volt, 0.060Ω, HEXFETHEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance.\nHEXFET transistors also feature all of the well-established advantage

Infineon

英飞凌

Simple Drive Requirements

文件：37.28 Kbytes 页数：4 Pages

IRF