Power MOSFET(Vdss=200V, Rds(on)max=600mohm, Id=5.0A)

Applications ● High frequency DC-DC converters Benefits ● Low Gate to Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Typical SMPS Topologies ● T

文件：132.73 Kbytes 页数：10 Pages

IRF

丝印：IPAK；Package：TO-251；Isc N-Channel MOSFET Transistor

• FEATURES • With TO-251(IPAK) packaging • Uninterruptible power supply • High speed switching • Hard switched and high frequency circuits • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications •

文件：319.43 Kbytes 页数：2 Pages

ISC

无锡固电

SMPS MOSFET

Applications ● High frequency DC-DC converters Benefits ● Low Gate to Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current

文件：3.73907 Mbytes 页数：10 Pages

KERSEMI

HEXFET Power MOSFET

Applications • High frequency DC-DC converters • Lead-Free Benefits • Low Gate to Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current

文件：220.96 Kbytes 页数：10 Pages

IRF

SMPS MOSFET

文件：3.83872 Mbytes 页数：10 Pages

KERSEMI

N-Channel 200 V (D-S) MOSFET

文件：1.5654 Mbytes 页数：6 Pages

VBSEMI

微碧半导体

High frequency DC-DC converters

文件：230.1 Kbytes 页数：11 Pages

IRF

采用 I-Pak 封装的 200V 单 N 沟道功率 MOSFET

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度;

Infineon

英飞凌