250V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

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FAIRCHILD

仙童半导体

12V-300V NMOS

CRMICRO

华润微电子

MOSFET N-CH 250V 2.2A IPAK

ONSEMI

安森美半导体

HEXFET짰 Power MOSFET

HEXFET® Power MOSFET • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR214) • Straight Lead (IRFU214) • Available in Tape & Reel • Fast Switching • Ease of Paralleling • Lead-Free

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IRF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

文件：1.74298 Mbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

文件：4.26318 Mbytes 页数：7 Pages

KERSEMI