采用 TO-262 封装的 75V 单 N 沟道功率 MOSFET

\n优势:\n• Optimized for broadest availability from distribution partners\n• Product qualification according to JEDEC standard\n• Optimized for 10V gate-drive voltage (called Normal level)\n• Industry standard through-hole power package\n• High-current carrying capability package (upto 195A, die-size ;

Infineon

英飞凌

HEXFET Power MOSFET

Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Benefits Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA

文件：829.1 Kbytes 页数：11 Pages

IRF

PELLET DIODES

文件：66.14 Kbytes 页数：2 Pages

Microsemi

美高森美

Advanced high cell denity trench technology for ultra RDS(ON)

文件：661.89 Kbytes 页数：4 Pages

KERSEMI

TRIPLE DIFFUSED NPN TRANSISTOR (HIGH VOLTAGE SWITCHING, COLOR TV HORIZONTAL DIRVER, COLOR TV CHROMA OUTPUT)

HIGH VOLTAGE SWITCHING APPLICATION. COLOR TV HORIZONTAL DIRVER APPLICATION. COLOR TV CHROMA OUTPUT APPLICATION. FEATURES • High Voltage : V(BR)CEO=300V. • Small Collector Output Capacitance : Cob=3.0pF(Typ.).

文件：458.34 Kbytes 页数：3 Pages

KEC

KEC(Korea Electronics)