丝印：D2PAK；Package：TO-263；isc N-Channel MOSFET Transistor

文件：263.26 Kbytes 页数：2 Pages

ISC

无锡固电

采用无铅 D2-Pak 封装的 40V 单 N 通道 HEXFET 功率 MOSFET

\n优势:\n• Optimized for broadest availability from distribution partners\n• Product qualification according to JEDEC standard\n• Optimized for 10V gate-drive voltage (called Normal level)\n• Silicon optimized for applications switching below <100KHz\n• Softer body-diode compared to previous silicon g;

Infineon

英飞凌

Brushed Motor drive applications

HEXFET® Power MOSFET Benefits ● Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ● Fully Characterized Capacitance and Avalanche SOA ● Enhanced body diode dV/dt and dI/dt Capability ● Lead-Free, RoHS Compliant Application ● Brushed Motor drive applications ● BLDC Motor drive applicati

文件：304.93 Kbytes 页数：11 Pages

IRF

Brushed Motor drive applications

HEXFET® Power MOSFET Benefits ● Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ● Fully Characterized Capacitance and Avalanche SOA ● Enhanced body diode dV/dt and dI/dt Capability ● Lead-Free, RoHS Compliant Application ● Brushed Motor drive applications ● BLDC Motor drive applicati

文件：304.93 Kbytes 页数：11 Pages

IRF

Brushed Motor drive applications

文件：535.65 Kbytes 页数：11 Pages

IRF

Brushed Motor drive applications

文件：535.65 Kbytes 页数：11 Pages

IRF

Brushed Motor drive applications

文件：310.39 Kbytes 页数：12 Pages

IRF

Brushed Motor drive applications

文件：310.39 Kbytes 页数：12 Pages

IRF

采用 7 引脚 D2-Pak 封装的 40V 单 N 通道 HEXFET 功率 MOSFET

\n优势:\n• 符合 RoHS\n• 改善栅极, 雪崩以及动态 dV/dt 坚固性\n• 具备完全特性化的电容和雪崩安全工作区（ SOA）\n• 增强的体二极管dV/dt 和 dI/dt 能力;

Infineon

英飞凌