Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：1.38963 Mbytes 页数：11 Pages

IRF

P-Channel 60-V (D-S) MOSFET

文件：1.02804 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

场效应管

HXY MOSFET

华轩阳电子

HEXFET POWER MOSFET ( VDSS = -60V , RDS(on) = 0.28廓 , ID = -8.8A )

Description Third Generation HEXFETs MOSFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR9024) • Stra

文件：1.17972 Mbytes 页数：10 Pages

IRF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

文件：1.97285 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件：4.49216 Mbytes 页数：7 Pages

KERSEMI