500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

文件：654.52 Kbytes 页数：9 Pages

Fairchild

仙童半导体

Power MOSFET

文件：1.12237 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

MOSFET N-CH 500V 2.3A DPAK

ONSEMI

安森美半导体

HEXFET POWER MOSFET ( VDSS = 500V , RDS(on) = 3.0廓 , ID = 2.4A )

文件：857.33 Kbytes 页数：10 Pages

IRF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

文件：1.88411 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

Dynamic dV/dt Rating

文件：4.27854 Mbytes 页数：7 Pages

KERSEMI